2021
DOI: 10.3390/electronics10202492
|View full text |Cite
|
Sign up to set email alerts
|

Technique for Profiling the Cycling-Induced Oxide Trapped Charge in NAND Flash Memories

Abstract: NAND Flash memories have gained tremendous attention owing to the increasing demand for storage capacity. This implies that NAND cells need to scale continuously to maintain the pace of technological evolution. Even though NAND Flash memory technology has evolved from a traditional 2D concept toward a 3D structure, the traditional reliability problems related to the tunnel oxide continue to persist. In this paper, we review several recent techniques for separating the effects of the oxide charge and tunneling … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
6
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 5 publications
(6 citation statements)
references
References 51 publications
0
6
0
Order By: Relevance
“…The fourth review paper in the Special Issue is by Chiu and Shirota [4] and summarizes a method to investigate the endurance of NAND Flash memories starting from cell transconductance. Nowadays, NAND Flash memories represent the dominant nonvolatile storage solution, and techniques allowing us to get some information about the microscopic mechanisms constraining its endurance are of utmost importance for the development of next-generation technology nodes.…”
Section: Overview Of the Papers In The Special Issuementioning
confidence: 99%
“…The fourth review paper in the Special Issue is by Chiu and Shirota [4] and summarizes a method to investigate the endurance of NAND Flash memories starting from cell transconductance. Nowadays, NAND Flash memories represent the dominant nonvolatile storage solution, and techniques allowing us to get some information about the microscopic mechanisms constraining its endurance are of utmost importance for the development of next-generation technology nodes.…”
Section: Overview Of the Papers In The Special Issuementioning
confidence: 99%
“…As the extracted Q T does not obey the power law at a large N, Eq. 1 needs to be modified as follows 20,21 ECS Advances, 2022 1 042001…”
Section: Figures 3a and 3bmentioning
confidence: 99%
“…In this study, we used a recently developed transconductance (G m max , ) technique, 20,21 which enabled the extraction of cyclinginduced gate oxide charge density (Q T ) to quantitatively analyze the effect of ambient hydrogen content on the endurance characteristics of NAND flash memories. The remainder of this paper is organized as follows: section 2 describes the structure of NAND flash memory devices and experiments.…”
mentioning
confidence: 99%
“…[ 11–13 ] These problems are fundamentally due to the quantum mechanical tunneling of electronic carriers in the V‐NAND structures. [ 14–16 ]…”
Section: Introductionmentioning
confidence: 99%
“…[11][12][13] These problems are fundamentally due to the quantum mechanical tunneling of electronic carriers in the V-NAND structures. [14][15][16] In this regard, the vertically integrated resistive switching random access memory (V-ReRAM) draws great attention because the ionic switching mechanism may suffer less from the quantum mechanical effects. Apart from the commercially available layer-by-layer stacking of the memory layers, as in the Optane memory, where the word lines (WL) and bit lines (BL) are present on the given 2D plane, such a V-ReRAM must have vertically aligned BL to minimize the Si surface area consumption by the contacts.…”
mentioning
confidence: 99%