2013
DOI: 10.1016/j.solmat.2013.09.001
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Technological status of plasma-deposited thin-film silicon photovoltaics

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Cited by 33 publications
(12 citation statements)
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“…1.12 eV [ Shah et al, 2013]. In order to mitigate the degradation of the a-Si:H top cell due to the SWE effect, it needs to be as thin as possible, typically 0.2-0.3 µm.…”
Section: Introductionmentioning
confidence: 99%
“…1.12 eV [ Shah et al, 2013]. In order to mitigate the degradation of the a-Si:H top cell due to the SWE effect, it needs to be as thin as possible, typically 0.2-0.3 µm.…”
Section: Introductionmentioning
confidence: 99%
“…Since the report of the first device grade nc-Si:H (Meier et al, 1994), significant progress has been made in our understanding of nc-Si:H that has resulted in further improvement of material quality (Guha et al, 2013;Shah et al, 2013). The incorporation of this material in multi-junction structure has resulted in achieving initial active-area cell efficiency of 16.3% .…”
Section: Introductionmentioning
confidence: 99%
“…However, further cost reductions will require less material and energy consumption in the production process. On the other hand, thin-film silicon based solar cells are produced with less material and energy consumption, but the efficiencies are still limited to 12% to 13.4% for laboratory-scale solar cells [6], [7], despite intensive research and development in this field over the past several decades. Thin-film deposition technology has some vital advantages over wafer-based manufacturing: silicon layers as well as contact and passivation layers can be deposited uniformly over several square meter areas, for example, 5.72 m 2 in an Applied Materials Sunfab production line [6].…”
Section: Introductionmentioning
confidence: 99%