Technology and metrology of new electronic materials and devices

Vogel, Eric M.

doi:10.1038/nnano.2006.142

Cited by 181 publications

(81 citation statements)

References 83 publications

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“…These methods offer exceptional sensitivity in characterizing the atomic composition and structure of clean substrates and in turn have been critical to developing materials and processes in semiconductor fabricationin part for their high sensitivity in measuring the densities of impurities and dopants-and to understanding the mechanisms of heterogeneous catalytic processes. 5,6 An excellent survey of these methods is provided in the text by Adamson and Gast. 7 Included is x-ray photoelectron spectroscopy where a monoenergetic x-ray source is used to eject inner shell electrons that are then analyzed to quantitatively identify the composition of elements comprising a surface.…”

Section: Analytical Methods In Surface Sciencementioning

confidence: 99%

Mass Spectrometry of Self-Assembled Monolayers: A New Tool for Molecular Surface Science

2008

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Most reactions can be performed in solution and on a surface. Yet the challenges faced in applying known reactions or in developing entirely new reactions for modifying surfaces remain formidable. The products of many reactions performed in solution can be characterized in minutes and even products having complex structures can be characterized in hours. When performed on surfaces, even the most basic reactions require a substantial effort-requiring several weeks-to characterize the yields and structures of the products. This contrast stems from the lack of convenient analytical tools that provide rapid information on the structures of molecules attached to a surface. This review describes recent work that has established mass spectrometry as a powerful method for developing and characterizing a broad range of chemical reactions of molecules attached to self-assembled monolayers of alkanethiolates on gold. The SAMDI-TOF mass spectrometry technique will enable a next generation of applications of molecularly defined surfaces to problems in chemistry and biology. Keywordsbiochip; interfacial reactions; label-free; self-assembled monolayer; SAMDI-TOF mass spectrometryThe scientific and engineering disciplines have developed sophisticated toolboxes for making matter-including examples from organic chemistry to create small molecules with virtually unlimited complexity, molecular biology to prepare macromolecules with a precise arrangement of amino acids and a defined tertiary structure, and lithographic methods to fashion inorganic and metallic materials into integrated circuits and devices. Each of these approaches is based on distinct methods for assembling matter and each relies on analytical methods that can characterize the structures that they generate. In the bottom-up approaches common to synthetic chemistry, a range of methods including NMR and x-ray diffraction are used to delineate the connectivity of atoms within molecules. The biopolymers created using enzyme-mediated conversions are characterized using electrophoretic methods and high resolution mass spectrometry, while integrated circuits are characterized with electron microscopy, scanning probe tools, and sensitive spectroscopies. The tools remain fundamental to each of these areas, enabling further advances in the preparation of their respective targets.The pursuit of structures with at least one dimension sized between 1-100 nm-which underlies the nanoscience and technology discipline that has grown over the past decade-is likewise dependent on analytical methods, and in several cases has been hampered by a lack of methods having appropriate performance. 1 For example, it remains difficult to characterize the products resulting from treatment of proteins or carbon nanotubes with organic reagents 2 and it is still difficult to characterize the dynamic structures of lipid rafts in bilayer membranes. 3 This review deals with the analogous challenge of characterizing the molecular structures of Published as: ACS Nano. 2008 January ; 2(1): 7-18...

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Section: Analytical Methods In Surface Sciencementioning

confidence: 99%

Mass Spectrometry of Self-Assembled Monolayers: A New Tool for Molecular Surface Science

2008

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“…The better stability, higher signal-to-noise ratio, and lower background offered by the new generation aberration-corrected electron microscope is expected to further reduce the statistical errors in HAADF intensity measurements. For the characterization of the 3D morphology of nanoparticles, STEM electron tomography is a very powerful technique and has been successfully employed for embedded and stable nanoparticles [31]. The main limitation of the technique is the time required to take full tomographs.…”

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confidence: 99%

Weighing Supported Nanoparticles: Size-Selected Clusters as Mass Standards in Nanometrology

Young

Chen

et al. 2008

Phys. Rev. Lett.

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We present a new approach to quantify the mass and 3D shape of nanoparticles on supports, using sizeselected nanoclusters as mass standards in scanning transmission electron microscope. Through quantitative image intensity analysis, we show that the integrated high angle annular dark field intensities of size-selected gold clusters soft-landed on graphite display a monotonic dependence on the cluster size as far as $6500 atoms. We applied this mass standard to study gold nanoparticles prepared by thermal vapor deposition and by colloidal wet chemistry, and from which we deduced the shapes of these two types of nanoparticles as expected. DOI: 10.1103/PhysRevLett.101.246103 PACS numbers: 81.07.Àb, 61.46.Bc, 61.46.Df, 68.37.Ma Since the properties of nanoclusters and nanoparticles depend critically on their size [1,2], the measurement of their mass is crucial. For example, knowledge of the mass, i.e., the number of atoms in the clusters, when coupled with the measured projected area of the nanoparticles, would enable us to deduce the 3D shape of the nanoparticles. This is of particular importance in areas such as environmental health [3] and catalysis [4,5], because it regulates the effective surface area of the (typically supported) particles. However, atom counting is a challenging task for nanoparticles on surfaces, in terms of accuracy, efficiency, and mass range. Here we show that soft-landed size-selected atomic clusters can be used as mass standards which enable surface mass spectrometry by scanning transmission electron microscopy (STEM). For Au clusters on carbon surfaces, we find that the measured relationship between mass and the high angle annular dark field (HAADF) intensity in STEM displays a monotonic dependence on cluster size as far as $6; 500 atoms. This extends the applicable mass range for STEM-based mass spectrometry by about 3 orders of magnitude [6,7]. The method is demonstrated by the 3D shape determination of colloidal, evaporated and size-selected Au nanoparticles.There are a number of ways that the masses of nanoparticles on surfaces can be measured. Cantilever-based techniques have recently been demonstrated for mass detection at the zeptogram level (10 À21 g) [8,9]. Electronmicroscopy-based techniques have a long history [6,7,[10][11][12][13][14][15][16][17][18]. In Zeitler and Bahr's early work of 1962, the mass of nanoparticles has been determined down to 10 À18 g using STEM with an accuracy of 10% [17]. The advantage of this approach is that the mass information obtained can be directly correlated to the structure and properties of the particle studied. The concept of atomic-level mass determination by STEM, as developed by Howie, is a quantitative application of the HAADF-STEM imaging method [18,19]. This requires an accurate knowledge of the electron scattering cross section ( ) as a function of the number of atoms (N) and the number of electrons in the focused electron beam. Ab initio calculation of high angle electron scattering cross section of nanoparticles is a challenging...

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“…In case of DRAM, as an alternative technology with relaxed scaling constraints, capacitor-less one-transistor (1T) DRAM cells have been investigated by several research groups [2,3]. Impact ionization or gate induced drain leakage generates excess majority carriers in floating body, which switches the channel conductance of metal-oxide-semiconductor field effect transistor (MOSFET) from a low conductance state to a high conductance state [2,3].…”

Section: Introductionmentioning

confidence: 99%

“…in vertical device architecture [3], which provides larger scale integration at the same technology node. Vertical integration of memory cells is also important in recent flash memory development [4], where the effective unite cell size can be reduced below 4F 2 by three dimensional stacked integration.…”

Section: Introductionmentioning

confidence: 99%

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High Quality Vertical Silicon Channel by Laser-Induced Epitaxial Growth for Nanoscale Memory Integration

Son¹,

Baik²,

Kang³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

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Abstract-As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of 300 cm 2 /Vs, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-theart memory technology.

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Technology and metrology of new electronic materials and devices

Cited by 181 publications

References 83 publications

Mass Spectrometry of Self-Assembled Monolayers: A New Tool for Molecular Surface Science

Mass Spectrometry of Self-Assembled Monolayers: A New Tool for Molecular Surface Science

Weighing Supported Nanoparticles: Size-Selected Clusters as Mass Standards in Nanometrology

High Quality Vertical Silicon Channel by Laser-Induced Epitaxial Growth for Nanoscale Memory Integration

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