Technology development challenges for advanced group IV semiconductor devices

Abstract

Advanced devices are not only driven by minimum device geometry, performance enhancement, and cost issues, but also require a low power consumption. Device scaling for higher performance and lower power consumption necessitates the introduction of advanced process modules, new materials new device architectures and, finally, even the use of alternative device operation principles compared to the standard MOS transistor. Several of these advanced devices will be discussed in view of their scalability and their potential for coping with the ITRS roadmap. Key performance parameters will be investigated.

Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature

“…Their compatibility with complementary metal-oxide-semiconductor (CMOS) and ultra-large-scale integration (ULSI) is an added advantage, as those technologies are widely used in the semiconductor industry. [22,23] In this study, we synthesized, via epitaxial growth, monocrystalline relaxed Ge 1−x Sn x thin film epilayers, with Sn contents up to 9%, on underlying Si substrate via a relaxed Ge buffer layer. We demonstrate, through experiments, that these Ge 1−x Sn x epilayers exhibit the lowest thermal conductivity value among all group-IV semiconductors, at room temperature; which happens to be comparable to one of the best TE materials and we expect that it could be lowered even further.…”

“…Their compatibility with complementary metal‐oxide‐semiconductor (CMOS) and ultra‐large‐scale integration (ULSI) is an added advantage, as those technologies are widely used in the semiconductor industry. [ 22,23 ]…”