2014
DOI: 10.1016/j.nima.2014.06.008
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Technology developments and first measurements of Low Gain Avalanche Detectors (LGAD) for high energy physics applications

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Cited by 333 publications
(279 citation statements)
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“…In semiconductors this effect is used in Avalanche Photon Detectors (APD) with gain in the 100's and Silicon Photon Multipliers (SiPM) with a gain of about 10,000 [10]. In distinction to those applications, UFSD are based on Low-Gain Avalanche Detectors (LGAD) with a gain of 10-20 [11].…”
Section: Low-gain Avalanche Detectors (Lgad)mentioning
confidence: 99%
See 1 more Smart Citation
“…In semiconductors this effect is used in Avalanche Photon Detectors (APD) with gain in the 100's and Silicon Photon Multipliers (SiPM) with a gain of about 10,000 [10]. In distinction to those applications, UFSD are based on Low-Gain Avalanche Detectors (LGAD) with a gain of 10-20 [11].…”
Section: Low-gain Avalanche Detectors (Lgad)mentioning
confidence: 99%
“…LGAD sensors was presented in 2014 by CNM [11] while the first production of thin UFSD (50 µm) by CNM was presented in 2016 [42]. First beam test results on thin UFSD manufactured by CNM have been obtained in 2016 [43].…”
Section: Ufsd Productionsmentioning
confidence: 99%
“…An alternative approach to enhance the timing performance for silicon devices is the usage of thin, low gain avalanche detectors (LGAD) [18,19]. These sensors have a gain layer similar to APDs but with a modified doping profile.…”
Section: Low-gain Avalanche Diodesmentioning
confidence: 99%
“…The P-Stop is created by using the channel stopper implantation and is the most effective way to eliminate the surface current path at the cost of added peripheral area. LGAD detectors have been fabricated with a gain in the range of 10 and a capability of sustaining more than 1000 V with different detection areas [1]. The edge termination and peripheral regions were optimized according to the analysis reported in this paper.…”
Section: D) P-spray and P-stopmentioning
confidence: 99%