Technology of Integrated Circuits

Widmann, Dietrich; Mader, Hermann; Friedrich, Hans; Heywang, Walter; Müller, R.

doi:10.1007/978-3-662-04160-4

Cited by 21 publications

(16 citation statements)

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“…Sample surfaces 1 to 3 were cleaned in accordance with the standard cleaning procedure (5 min SC-1, 5 min SC-2) [11,12], followed by ''Marangoni'' drying with isopropanol [28]. Sample surface 4 was cleaned by rinsing with N,N-dimethylformamide, followed by H 2 O finesonic cleaning [29]. Vapor priming with HMDS was performed using standard production conditions of 90°C for 10, 20, and 45 s in an industrial coater track system from Dainippon Screen.…”

Section: Methodsmentioning

confidence: 99%

Correlation of surface roughness and surface energy of silicon-based materials with their priming reactivity

et al. 2012

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In this work, the effect of surface roughness and cleaning procedures on reactivity during priming with hexamethyldisilazane is described for four silicon substrates frequently used in semiconductor technology, namely thermally grown SiO 2 , argon implanted tetraorthosilicate SiO 2 , polysilicon, and amorphous silicon. Surface energy and roughness were determined by static contact angle measurements and atomic force microscopy. The surface roughness of the silicon substrates increased in the order: thermally grown SiO 2 , argon implanted tetraorthosilicate SiO 2 , polysilicon, and amorphous silicon. It was found not to be substantially affected by standard cleaning procedures. The surface energy of all silicon samples decreased with increasing hexamethyldisilazane vapor exposure at 90°C, and the extent of the decrease corresponded to the surface roughness. Furthermore, a promoting effect on the silylation reaction by an argon implantation process was determined. A correlation between the surface morphology of different silicon materials and reactivity in the silylation reaction with hexamethyldisilazane could be established.

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Section: Methodsmentioning

confidence: 99%

Correlation of surface roughness and surface energy of silicon-based materials with their priming reactivity

et al. 2012

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“…The silicon resistance is approximated using a fill factor approach for estimating the effect of perforation. As a modulation frequency of f 3dB = 100 GHz is desired and using the geometry values given above we arrive at a minimum resistivity of about 0.1 Ωcm, which can be achieved by using a dopant concentration of n D = 10 17 [29]. At this relatively modest doping level the additional optical loss of ~2 dB/cm [30] in the bulk silicon is negligible considering the device length of about 10 µm.…”

Section: Loaded Resonator Performancementioning

confidence: 92%

Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator

Wülbern¹,

Petrov²,

Eich³

2009

Opt. Express

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Abstract:We present a novel concept of a compact, ultra fast electro-optic modulator, based on photonic crystal resonator structures that can be realized in two dimensional photonic crystal slabs of silicon as core material employing a nonlinear optical polymer as infiltration and cladding material. The novel concept is to combine a photonic crystal heterostructure cavity with a slotted defect waveguide. The photonic crystal lattice can be used as a distributed electrode for the application of a modulation signal. An electrical contact is hence provided while the optical wave is kept isolated from the lossy metal electrodes. Thereby, well known disadvantages of segmented electrode designs such as excessive scattering are avoided. The optical field enhancement in the slotted region increases the nonlinear interaction with an external electric field resulting in an envisaged switching voltage of approximately 1 V at modulation speeds up to 100 GHz. real-time second-harmonic generation study of a novel covalently functionalized amorphous nonlinear optical polymer," J. Appl. Phys. 66, 2559-2567 (1989). 2008 Optical Society of America

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“…After substituting boundary conditions (5), (6) and after doing necessary transformations we obtained general expression of potential distribution  (1) in the sample for the situation when electroconductivity of the sample changed with depth according to exponential law (1): (12) In the case when electroconductivity changes with depth according to the Gaussian distribution function (2), the expression for potential in the sample  (2) acquires the form: (13) where…”

Section: Mathematical Model Of Potential Distributionmentioning

confidence: 99%

“…Semiconductors technologies realized on the base of semiconductor crystal and films are wildly used in modern electronics [1,2]. More and more demanding requirements have been laid out for electric properties of such materials.…”

Section: Introductionmentioning

confidence: 99%

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Mathematical modeling of electric potential in semiconductors with heterogeneous dopant profile

Филиппов¹,

Luzyanin²

2014

astp

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The theoretical modeling of electric field in semiconductors with heterogeneous doping profile has been done. The cases when electroconductivity changes with depth according to exponentional law or is described by Gaussian function have been considered. Theoretical justification has been giving by solving electrodynamic boundary value problem with certain boundary conditions. The expressions in the form of analytical function series for potential distribution at probe measurements have been obtained.Keywords: heterogeneous semiconductor, boundary value problem, electric potential, probe measurement 1150 V. V. Filippov and S. E. Luzyanin

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Technology of Integrated Circuits

Cited by 21 publications

References 0 publications

Correlation of surface roughness and surface energy of silicon-based materials with their priming reactivity

Correlation of surface roughness and surface energy of silicon-based materials with their priming reactivity

Electro-optical modulator in a polymerinfiltrated silicon slotted photonic crystal waveguide heterostructure resonator

Mathematical modeling of electric potential in semiconductors with heterogeneous dopant profile

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