“…Ion-implantation induced defects can be removed by subsequent annealing process. Because of several advantages of thin films modification, such as non-contamination, easy control of the thickness and composition of ion rich layer, ion implantation was chosen in the modification of TiO 2 [38][39][40][41][42][43][44][45][46][47][48][49][50]. As to Ag ion-implantation, several studies have reported that very small (about 2-3 nm) Ag NPs were formed near the surface of TiO 2 films [44,45].…”