2014
DOI: 10.1016/j.nimb.2014.06.018
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Teflon impregnated anatase TiO 2 nanoparticles irradiated by 80 keV Xe + ions

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Cited by 4 publications
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“…Ion-implantation induced defects can be removed by subsequent annealing process. Because of several advantages of thin films modification, such as non-contamination, easy control of the thickness and composition of ion rich layer, ion implantation was chosen in the modification of TiO 2 [38][39][40][41][42][43][44][45][46][47][48][49][50]. As to Ag ion-implantation, several studies have reported that very small (about 2-3 nm) Ag NPs were formed near the surface of TiO 2 films [44,45].…”
Section: Introductionmentioning
confidence: 99%
“…Ion-implantation induced defects can be removed by subsequent annealing process. Because of several advantages of thin films modification, such as non-contamination, easy control of the thickness and composition of ion rich layer, ion implantation was chosen in the modification of TiO 2 [38][39][40][41][42][43][44][45][46][47][48][49][50]. As to Ag ion-implantation, several studies have reported that very small (about 2-3 nm) Ag NPs were formed near the surface of TiO 2 films [44,45].…”
Section: Introductionmentioning
confidence: 99%