2015
DOI: 10.1587/transele.e98.c.1091
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Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication

Abstract: SUMMARY There have recently been more and more reports on CMOS integrated circuits operating at terahertz (≥ 0.1 THz) frequencies. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews recent progress made by the authors in terahertz CMOS design for low-power and high-speed wireless communication, including device characterization and modeling techniques. Low-power high-speed wireless data transfer at 11 Gb/s and 19 pJ/bit and a 7-pJ/bit ultra-low-p… Show more

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Cited by 42 publications
(10 citation statements)
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“…As for electronic devices, recent progress in nano-fabrication technologies facilitated the progress of semiconductor devices that function in the THz frequency band. Such devices include Gallium Arsenide and Indium Phosphide electronics [8] as well as various Silicon-based technologies [9]. Recently, the authors in [10], presented an innovative Silicon architecture, which permits its scalability, to allow signal synthesis and enable the shaping of THz waves in a single microchip.…”
Section: A Terahertz Transceiversmentioning
confidence: 99%
“…As for electronic devices, recent progress in nano-fabrication technologies facilitated the progress of semiconductor devices that function in the THz frequency band. Such devices include Gallium Arsenide and Indium Phosphide electronics [8] as well as various Silicon-based technologies [9]. Recently, the authors in [10], presented an innovative Silicon architecture, which permits its scalability, to allow signal synthesis and enable the shaping of THz waves in a single microchip.…”
Section: A Terahertz Transceiversmentioning
confidence: 99%
“…3 and 4 illustrate the proposed schematic of the VCO, and hopping frequency planning of the probing signals by digital-assisted switching and analog control voltage tuning, respectively. The PMOS-based VCO with cross couple topology lowers the flicker noise and then improves the overall phase noise [29,30].…”
Section: Circuit Designmentioning
confidence: 99%
“…For example, at 180 GHz, a Ge-based photomixer on an Si platform can exhibit an equivalent isotropic radiated power (EIRP) of more than -15 dBm in the 170-190 GHz band [14], with the high degree of integration associated with these technologies. As for the likelihood of achieving cheap, low-consumption THz transmission links in the future, CMOS technologies have also been considered, and the transmission of several Gbps at 130 GHz has already been achieved for indoor communications [15]. As with early MODEMs and early optical transmission systems, communication in the THz range holds out the promise of high performance and new uses over the next two decades.…”
Section: Terahertzmentioning
confidence: 99%