Telecommunication wavelength GaAsBi light emitting diodes

Richards, Robert D.; Hunter, C. J.; Bastiman, F.; Mohmad, Abdul Rahman; David, J.P.R.

doi:10.1049/iet-opt.2015.0051

Cited by 26 publications

(25 citation statements)

References 22 publications

(44 reference statements)

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“…With Varshni parameters α = 0.42 meVK −1 and β = 270 K , which sit comfortably in the range of previously reported parameters for GaAsBi where α = 0.1–0.63 meVK −1 and β = 120–295 K 26,30,31,41,42 . The close agreement with the Varshni relation suggests that the majority of tail states in the distribution are filled under 666.4 Wcm −2 excitation and that the emission characteristics are dominated by the much larger density of shallow states close to the mobility edge.…”

Section: Presentation and Discussion Of Resultssupporting

confidence: 88%

Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi

Wilson

Hylton

Harada

et al. 2018

Sci Rep

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A comprehensive assessment of the nature of the distribution of sub band-gap energy states in bulk GaAsBi is presented using power and temperature dependent photoluminescence spectroscopy. The observation of a characteristic red-blue-red shift in the peak luminescence energy indicates the presence of short-range alloy disorder in the material. A decrease in the carrier localisation energy demonstrates the strong excitation power dependence of localised state behaviour and is attributed to the filling of energy states furthest from the valence band edge. Analysis of the photoluminescence lineshape at low temperature presents strong evidence for a Gaussian distribution of localised states that extends from the valence band edge. Furthermore, a rate model is employed to understand the non-uniform thermal quenching of the photoluminescence and indicates the presence of two Gaussian-like distributions making up the density of localised states. These components are attributed to the presence of microscopic fluctuations in Bi content, due to short-range alloy disorder across the GaAsBi layer, and the formation of Bi related point defects, resulting from low temperature growth.

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Section: Presentation and Discussion Of Resultssupporting

confidence: 88%

Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi

Wilson

Hylton

Harada

et al. 2018

Sci Rep

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“…The mean value of σ 2 was 96 meV which is close to the value of 100 meV found in 21 where only a single Gaussian was used to fit the PL spectra. Also this is in broad agreement with the calculated energies to which the LDOS extends from other reports 15 , 16 .…”

Section: Resultssupporting

confidence: 92%

“…These states can be indirectly observed through an “s” shaped deviation from the standard Varshni behaviour of temperature dependent photoluminescence (PL) measurements 13 , 14 . Suppression of this effect through p-doping has been displayed and was used to estimate that the proportion of incorporated Bi atoms which contribute to these localised states is approximately 0.2% 15 and temperature dependent luminescence studies have indicated that these states exist up to around 90 meV above the valence band 15 , 16 .…”

Section: Introductionmentioning

confidence: 99%

Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling

Bailey

Rockett

Flores

et al. 2022

Sci Rep

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A series of gallium arsenide bismide device layers covering a range of growth conditions are thoroughly probed by low-temperature, power-dependent photoluminescence measurements. The photoluminescence data is modelled using a localised state profile consisting of two Gaussians. Good agreement with the raw data is achieved for all layers whilst fixing the standard deviation values of the two Gaussians and constraining the band gap using X-ray diffraction data. The effects of growth temperature and bismuth beam equivalent pressure on the localised state distributions, and other model variables, are both shown to be linked to emission linewidth and device properties. It is concluded that bismuth rich surface conditions are preferable during growth in order to produce the narrowest emission linewidths with this material. These results also show how the growth mode of a gallium arsenide bismide layer can be inferred ex-situ from low-temperature photoluminescence measurements.

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“…1,8,9 So far, light emitting diodes (LEDs) with GaAs 0.94 Bi 0.06 as active regions have shown a good room-temperature electroluminescence at about 1.20 lm. 10 Meanwhile, the electrically pumped GaAs-based lasers with three GaAs 0.94 Bi 0.06 active quantum wells (QWs) have been fabricated successfully with the lasing wavelength up to 1.06 lm. 11 However, the room temperature emission at longer wavelengths by using conventional type-I GaAsBi QWs grown on GaAs is rather limited due primarily to the difficulty in incorporating a high content of Bi (>6%) and simultaneously retaining the high optical quality.…”

Section: Introductionmentioning

confidence: 99%