Tellurium vacancy in two-dimensional Si2Te3 for resistive random-access memory

Xian, Xiujuan; Yu, Neng; Zhou, Junxiao; Wang, Jiafu

doi:10.1016/j.jssc.2021.122448

Cited by 3 publications

(2 citation statements)

References 34 publications

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“…There are several studies that propose the mechanism of resistive switching for Si 2 Te 3 memristors. Based on conventional oxide memristors, Xian et al have inferred that the formation and diffusion of tellurium vacancies are key processes in the resistive switching of Si 2 Te 3 . On the other hand, Wu et al suggested that the local phase transition associated with the external bias is responsible for the resistive switching of Si 2 Te 3 .…”

Section: Introductionmentioning

confidence: 99%

First-Principles Investigations on the Semiconductor-to-Metal Phase Transition of 2D Si₂Te₃ for Reversible Resistive Switching

Kim

Lee

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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Si2Te3 is attracting attention due to its compatibility with Si technology while still showing advantages as a two-dimensional layered material. Although recent experimental studies have observed the resistive switching process in Si2Te3-based memristors, the mechanism has not been clearly identified. In this study, first-principles density functional theory calculations are employed to understand the relationship between the phase transition of Si2Te3 and the reversible resistive switching of the Si2Te3-based memristor. Our calculation results show that although semiconducting Si2Te3 is energetically more stable than two metallic Si2Te3 phases (α and β), two metallic Si2Te3 can be energetically stabilized by excess holes. The enhanced energetic preference of two metallic Si2Te3 by excess holes is explained by the reduced occupation of antibonding states between Si and Te. Our study finds that the energy barrier for the phase transition between semiconducting Si2Te3 and α-metallic Si2Te3 varies significantly by excess charge carriers so the phase transition can be directly connected to the reversible resistive switching of the Si2Te3-based memristor under external bias. Our finding will serve as a cornerstone for optimizing the resistive switching process of the Si2Te3-based memristor.

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Section: Introductionmentioning

confidence: 99%

First-Principles Investigations on the Semiconductor-to-Metal Phase Transition of 2D Si₂Te₃ for Reversible Resistive Switching

Kim

Lee

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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“…This suggests a separate mechanism for the switching behavior of the thin films and explains why this low SET voltage is not observed in the nanowires. Several mechanisms exist for the resistive switching in silicon telluride including phase change 88 , and tellurium vacancy mobility 89 . The precise mechanisms surrounding the low SET voltage and large LRS:HRS ratio seen in Si2Te3 thin film devices require further exploration.…”

Section: Challenges Of Lithography Techniquesmentioning

confidence: 99%

Degradation Mechanisms and Dynamics of Silicon Telluride: A Guide to the Effective Fabrication and Characterization of Silicon Telluride-Based Devices

Hathaway

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Silicon telluride (Si2Te3) and many other tellurium containing compounds show emergent Raman peaks located at ~120 cm-1 and ~140 cm-1 as they age. The origin of these two emergent peaks is controversial in the literature and has been attributed to myriad causes such as the intrinsic Raman modes of the telluride materials, surface oxidation, defects, double resonances, and tellurium precipitates. The controversial nature of these peaks has led to the misidentification of highly degraded materials as pristine and to the misinterpretation of changes in Raman spectra. For the first time, quality thin film and bulk crystals of Si2Te3 are grown using a chemical vapor deposition (CVD) process. We then present a comprehensive and multimodal study of various Si2Te3 samples and find that the two emergent Raman peaks originate from tellurium nano-crystallites formed in the degraded surface layers of Si2Te3. The formation of the tellurium nano-crystallites are shown to be a result of a hydrolysis process in which Si2Te3 reacts with atmospheric water vapor. The challenges involved in the fabrication of Si2Te3 based devices are also discussed and ways in which degradation can be either prevented or reversed are demonstrated. Finally, we present preliminary data which shows promising low voltage switching behavior in Si2Te3 memory devices.

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Facile synthesis of MXene−Polyvinyl alcohol hybrid material for robust flexible memristor

Ling

Zhang²,

Zhang³

et al. 2023

Journal of Solid State Chemistry

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Tellurium vacancy in two-dimensional Si2Te3 for resistive random-access memory

Cited by 3 publications

References 34 publications

First-Principles Investigations on the Semiconductor-to-Metal Phase Transition of 2D Si₂Te₃ for Reversible Resistive Switching

First-Principles Investigations on the Semiconductor-to-Metal Phase Transition of 2D Si₂Te₃ for Reversible Resistive Switching

Degradation Mechanisms and Dynamics of Silicon Telluride: A Guide to the Effective Fabrication and Characterization of Silicon Telluride-Based Devices

Facile synthesis of MXene−Polyvinyl alcohol hybrid material for robust flexible memristor

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Tellurium vacancy in two-dimensional Si2Te3 for resistive random-access memory

Cited by 3 publications

References 34 publications

First-Principles Investigations on the Semiconductor-to-Metal Phase Transition of 2D Si2Te3 for Reversible Resistive Switching

First-Principles Investigations on the Semiconductor-to-Metal Phase Transition of 2D Si2Te3 for Reversible Resistive Switching

Degradation Mechanisms and Dynamics of Silicon Telluride: A Guide to the Effective Fabrication and Characterization of Silicon Telluride-Based Devices

Facile synthesis of MXene−Polyvinyl alcohol hybrid material for robust flexible memristor

Contact Info

Product

Resources

About

First-Principles Investigations on the Semiconductor-to-Metal Phase Transition of 2D Si₂Te₃ for Reversible Resistive Switching

First-Principles Investigations on the Semiconductor-to-Metal Phase Transition of 2D Si₂Te₃ for Reversible Resistive Switching