TEM study of silicide islands formation in reactions of thin films of metallic glasses with Si substrates

Rozhanskii, N. V.; Lifshits, V. O.

doi:10.1016/s0040-6090(96)08935-3

Cited by 2 publications

(1 citation statement)

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“…The width of the base of the largest pyramidal precipitate was about 30 nm for the specimen subjected to heat treatment at 500 C. The geometry of these pyramidal precipitates is similar to that of the Cu 3 Si islands generated on a Si(100) wafer with the Cu metallization after barrier failure. 26,27) It is also similar to those of various silicides formed in the solid-state reactions of Si wafers with Pd-Ta, 28) Nb-Ni, 28) Ni-W, 29) or Au. 30) Figure 3(a) shows a TEM bright-field image of the specimen after it was heated at 600 C for 1 h. The width of the base of the largest pyramidal precipitate was about 50 nm.…”

Section: Resultsmentioning

confidence: 67%

Formation of Novel Silicon Nitride with Face-Centered Cubic Crystal Structure in a TaN/Ta/Si(100) Thin Film System

Cheng

Jou

Chiu

2005

Jpn. J. Appl. Phys.

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The valence band structure of the (100) face of substoichiometric VN and VC has been studied using angle-resolved photoelectron spectroscopy. The experimental results are compared with theoretical spectra, calculated for the stoichiometric composition. The overall agreement between experiment and theory is found to be fairly good concerning both the trends in the peak dispersions and the relative peak intensities, although discrepancies in absolute peak positions occur. The similarities and differences in the spectra from the (100) face of VN and VC are also briefly discussed.

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