2013
DOI: 10.1016/j.jmatprotec.2012.11.028
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TEM study on the electrical discharge machined surface of single-crystal silicon

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Cited by 39 publications
(9 citation statements)
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“…W-sample were cut with Electrical Discharge Machining (EDM) technique and it is well known that the surface integrity of materials machined by EDM is typically poor 32 . The presence of significant carbon and oxides contamination at surface after machining 33,34 are responsible of an evolution of optical properties of materials. Moreover, the contamination depends on the physicalchemical conditions present during EDM machining and it can change from one sample to another cut from the same batch.…”
Section: Applicationmentioning
confidence: 99%
“…W-sample were cut with Electrical Discharge Machining (EDM) technique and it is well known that the surface integrity of materials machined by EDM is typically poor 32 . The presence of significant carbon and oxides contamination at surface after machining 33,34 are responsible of an evolution of optical properties of materials. Moreover, the contamination depends on the physicalchemical conditions present during EDM machining and it can change from one sample to another cut from the same batch.…”
Section: Applicationmentioning
confidence: 99%
“…Since the material on the surface of the singlecrystal silicon is removed by melting and vaporization, the removed material is carried out in the machining area by the moving electrode and flowing working fluid. However, some of the melted and vaporized materials that remain in the machining area are cooled by the working fluid and resolidify on the surface of the single-crystal silicon, thus forming the recast layer [26]. As shown in Figure 7, a recast layer with a thickness of approximately 15 μm is formed on the surface of monocrystalline silicon after discharge forming cutting.…”
Section: Removal Mechanism Of Discharge Forming Cutting-electrochemicalmentioning
confidence: 99%
“…erefore, it is necessary to reduce the deposition of the metamorphic layer by rotating the electrode or increasing the amount of flushing liquid during processing to improve the surface quality after processing. Murray et al [26] found that in the process of WEDM, the electrode material (tungsten grains) was deposited on the surface of single-crystal silicon, thereby forming a metamorphic layer, which further affects the surface quality of the processed material (single-crystal silicon). Yeh et al [27] found that when a phosphorous dielectric was used as the electrolyte for WEDM, the surface modification layer depth of single-crystal silicon after cutting was 20 μm, and the content of phosphorous reached 0.49 wt%.…”
Section: Introductionmentioning
confidence: 99%
“…While the examination of the recast layer, spherical electrode deposits, and a lot of one of the deposits of the wire-electrode material at the gas void side were detected in it, which were evident on the dark-and bright-field TEM micrographs. Murray et al [10] was interested in the TEM analysis on the WEDM surface of a single-crystal silicon. For the experiments, focused ion beam machining was carried out to produce a lamellar out of one of the machined holes.…”
Section: Introductionmentioning
confidence: 99%