Temperature and bias anomalies in the photoluminescence of InAs quantum dots coupled to a Fermi reservoir

Korsch, Alexander R.; Nguyen, Giang N.; Schmidt, Marcel; Ebler, C.; Valentin, Sascha R.; Lochner, Pia; Rothfuchs, Charlotte; Wieck, A. D.; Ludwig, Arne

doi:10.1103/physrevb.99.165303

Cited by 6 publications

(2 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This finding can be used to differentiate, within minutes, whether a PL peak is shaped by the ensemble or the cavity, and prevent misjudgments regarding QD growth onto and into photonic dielectric heterostructures. A more thorough model will take the coupling to a charge reservoir [37] and the standing wave field amplitude into account. If the PL is found cavity-dominated and further investigation is desired, the sample can be subsequently characterized by cleaved-edge PL.…”

Section: Ensemble Photoluminescenementioning

confidence: 99%

Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode

et al. 2021

View full text Add to dashboard Cite

In this submission, we discuss the growth of charge-controllable GaAs quantum dots embedded in an n-i-p diode structure, from the perspective of a molecular beam epitaxy grower. The QDs show no blinking and narrow linewidths. We show that the parameters used led to a bimodal growth mode of QDs resulting from low arsenic surface coverage. We identify one of the modes as that showing good properties found in previous work. As the morphology of the fabricated QDs does not hint at outstanding properties, we attribute the good performance of this sample to the low impurity levels in the matrix material and the ability of n- and p-doped contact regions to stabilize the charge state. We present the challenges met in characterizing the sample with ensemble photoluminescence spectroscopy caused by the photonic structure used. We show two straightforward methods to overcome this hurdle and gain insight into QD emission properties.

show abstract

Section: Ensemble Photoluminescenementioning

confidence: 99%

Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Reduced dimensions by constrictions on the nanometer scale in spatially tailored semiconductors lead to quantum confinement and large local density of states in a desired energy range, which is a huge advantage for many optoelectronic applications. One platform of such carrier confinement are self-assembled quantum dots (QDs), which enable research in fundamental solidstate physics [7,8] and quantum communication due to their excellent optical properties [9,10]. While the disadvantage of non-radiative recombination centers is obvious for optoelectronic devices, fluctuating charges in the environment of QDs are also unfavorable.…”

Section: Introductionmentioning

confidence: 99%

Influence of molecular beam effusion cell quality on optical and electrical properties of quantum dots and quantum wells

Nguyen,

Korsch,

Schmidt

et al. 2020

Preprint

Self Cite

View full text Add to dashboard Cite

Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this problem and find that reconditioning the aluminum cell by overheating can lead to a full recovery of the anomalies in photoluminescence and capacitance-voltage measurements, leading to excellent low noise heterostructures. Furthermore, we propose a method to sense photo-induced trap charges using capacitance-voltage spectroscopy on self-assembled quantum dots. Excitation energy-dependent ionization of defect centers leads to shifts in capacitance-voltage spectra which can be used to determine the charge density of photo-induced trap charges via 1D band structure simulations. This method can be performed on frequently used quantum dot diode structures.

show abstract