Temperature and Defect Effects on the Mechanical Properties of Pentadiamond

Qin, Huasong; Zhang, Guoqiang; Qin, Lang; Zhang, Yingyan; Liu, Yilun; Pei, Qing‐Xiang

doi:10.2139/ssrn.3802816

Cited by 2 publications

(4 citation statements)

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“…The interfacial trap density was calculated to be as low as ∼2.06 × 10 12 eV −1 cm −2 , comparable to those of SiNM TFTs fabricated with clean and smooth dielectric surfaces by using a transfer process. 40,46 The PS dielectric layer has the merits of good roughness and cleanliness because fewer impurities and suspension bonds were introduced at the SiNM/PS interface, which resulted in a low level of the interface states. 40,52 Transfer characteristic enabled dual-direction sweeping showed a low hysteresis level (Figure S1).…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

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Flexible Hybrid Single-Crystalline Silicon Nanomembrane Thin-Film Transistor with Organic Polymeric Polystyrene as a Gate Dielectric on a Plastic Substrate

Yang

Geng

Peng

et al. 2022

ACS Appl. Electron. Mater.

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Flexible thin-film transistors (TFTs) play an important role in flexible integrated circuits (ICs). Hybrid integrated transistors are highly desirable because of their high performance and simplified process. However, TFTs with a hybrid integrated heterostructure of single-crystalline semiconductor/organic dielectric layers have not yet been discussed. In this work, a flexible hybrid TFT comprised of a single-crystalline silicon nanomembrane (SiNM) semiconductor and polystyrene (PS) gate dielectric was fabricated on a PET substrate. The surface morphology of the PS dielectric layer on the PET substrate was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The electrical characteristics of the dielectric layer (PS) were also analyzed. SiNM was processed with a complementary metal–oxide–semiconductor (CMOS)-compatible process and subsequently transferred to the PET substrate with a PS/ITO stacked layer to complete the assembly of the flexible hybrid SiNM/PS TFT. The electrical properties of the flexible hybrid TFT were characterized under different bending conditions (i.e., flat and bending radii of 21, 38.5, and 77.5 mm). Furthermore, the stress analysis of TFTs influenced by a variation of the dielectric materials (i.e., PS, SiO2, and Al2O3), the adhesion conditions of the SiNM/PS interface, and the dielectric thickness were also discussed. The results revealed the potential of combining an organic polymeric dielectric with inorganic single-crystalline nanomembranes to fabricate high-performance flexible hybrid TFTs.

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Section: ■ Experimental Sectionmentioning

confidence: 99%

“…11−19,27−33 An ∼250 mV/dec subthreshold swing (SS) was also calculated by the equation46 the TFT can operate at high speed in the subthreshold region. The interfacial trap density (D it ) can be obtained through the equation46 …”

mentioning

confidence: 99%

Flexible Hybrid Single-Crystalline Silicon Nanomembrane Thin-Film Transistor with Organic Polymeric Polystyrene as a Gate Dielectric on a Plastic Substrate

Yang

Geng

Peng

et al. 2022

ACS Appl. Electron. Mater.

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show abstract

“…The low sensitivity of thermodynamic and thermoelastic properties to temperature makes pentadiamond a promising material for high anti-thermal-shock and accurate electronic device applications.carbon allotropes, e.g., 0D fullerene, 12 1D carbon nanotubes, 13 2D biphenylene, 14 and graphyne, 15 the low LTEC in 3D carbon allotropes, especially lower than that of diamond, is quite rare.Recently, a new carbon allotrope, pentadiamond, was reported in the literature. 16 Though its mechanical properties are not as novel as in the original report, [17][18][19] pentadiamond still exhibits some exciting properties, including (1) high stability both mechanically and dynamically 16 and at high temperatures up to 1100 K, 20 (2) thermal conductivity of 428-490 W m À1 K À1 at room temperature, 21,22 comparable with that of pure copper, (3) high electrical conductivity, 23 and (4) good optical and thermoelectric properties. 24,25 In the present work, the LTEC of pentadiamond is predicted, being negative at low temperature and lower than that of diamond in the temperature range of 0 K to 2000 K. The mechanism of the low LTEC is presented.…”

mentioning

confidence: 99%

“…Recently, a new carbon allotrope, pentadiamond, was reported in the literature. 16 Though its mechanical properties are not as novel as in the original report, [17][18][19] pentadiamond still exhibits some exciting properties, including (1) high stability both mechanically and dynamically 16 and at high temperatures up to 1100 K, 20 (2) thermal conductivity of 428-490 W m À1 K À1 at room temperature, 21,22 comparable with that of pure copper, (3) high electrical conductivity, 23 and (4) good optical and thermoelectric properties. 24,25 In the present work, the LTEC of pentadiamond is predicted, being negative at low temperature and lower than that of diamond in the temperature range of 0 K to 2000 K. The mechanism of the low LTEC is presented.…”

mentioning

confidence: 99%