Temperature and deformation dependence of p-Al_xGa_1−xAs/GaAs_1−yP_y/n-Al_xGa_1−xAs laser diode wavelength and polarization

Abstract

Numerical calculations of the optical energy gap and the optical gains g TE , g TM of TE and TM polarization modes in p-Al x Ga 1-x As/GaAs 0.84 P 0.16 /n-Al x Ga 1-x As laser diode structure are carried out for uniaxial compression up to P = 10 kbar along in-plane and normal to a heterostructure directions at temperature interval 77 K -300 K. The optical energy gap shift under compression is substantially anisotropic and does not change significantly between 77 K and 300 K. The g TM /g TE ratio is also almost insensitive to the temperature but demonstrates several times decrease under in-plane compression and no change under compression normal to a heterostructure.