Temperature and injection current dependent electroluminescence study of GaInP/AlGaInP quantum well laser diode grown using tertiarybutylarsine and tertiarybutylphosphine

Liu, C.Y.; Yoon, S. F.; Teng, Jinghua; Dong, Jianrong; Chua, Soo Jin

doi:10.1007/s00339-008-4419-0

Cited by 3 publications

(2 citation statements)

References 21 publications

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“…The activation energy at high temperature (> 60K) E2 is related to the confinement of the electron-hole pair in the quantum wells. In the case of AlGaInP quantum wells, Michler et al [21] followed by others studies [15], [17], [22] consider E2 as equal to one-half of the total confinement energy. For Daly and Glynn [19] and Fang et al [20] this energy is equal to the total confinement.…”

Section: Resultsmentioning

confidence: 99%

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Boussadi

Rochat

Barnes

et al. 2021

Journal of Luminescence

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Previous reports have studied the impact of sidewall defects on AlGaInP micro light emitting diode (µLED) only by Current-Voltage-Luminescence (I-V-L) measurements. In this work, we propose an alternative approach to investigate these defects directly after MESA formation, by coupling optical characterization techniques together with Time-of-flight secondary ion mass spectrometry (TOF-SIMS) on AlGaInP square shaped pixels of different sizes formed by BCl3-based Reactive Ion Etching (RIE). It is found that for a 6×6 µm² pixel, the light emission homogeneity is largely impacted by the sidewall defects. From emission efficiency map deduced by temperature-dependent cathodoluminescence measurements, we estimate that 86% of the 6×6 µm² pixel exhibit a lower efficiency than the center. The carriers lifetime extracted from time-resolved photoluminescence (TRPL) measurements on larger pixel begins to decrease gradually at 3 µm from the sidewall due to non-radiative recombinations. On the other hand, the TOF-SIMS analysis shows that residues of boron and chlorine remain on the surface and sidewalls of the pixel after BCl3 etching. These results show the importance to characterize the µLEDs at the MESA step and the necessity to optimize the etching process and the passivation.

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Section: Resultsmentioning

confidence: 99%

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Boussadi

Rochat

Barnes

et al. 2021

Journal of Luminescence

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show abstract

“…It is believed that E a is related to the total confinement energy (E Total ) of carriers in the QW region. 21) E Total of an electron-hole pair in a QW can be expressed as E g (Barrier) -E g (SE), as shown in the inset of Fig. 5.…”

mentioning

confidence: 99%

Temperature- and current-dependent spontaneous emission study on 2 µm InGaSb/AlGaAsSb quantum well lasers

Wang

Qiao

et al. 2017

Jpn. J. Appl. Phys.

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Spontaneous emission measurements, as a function of injection current and temperature, were carried out from the sidewall of a working 2 μm InGaSb/AlGaAsSb quantum well laser.The local Z power parameter was extracted to investigate the carrier recombination behaviors. A model involving the activation energy is presented to interpret the carrier loss mechanisms. Our findings show that the majority of the injected carriers recombine radiatively at low injection currents, and that Auger nonradiative recombination increases significantly with injection current. More importantly, no obvious temperature dependence of Z is observed from 20 to 80 o C.

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Radiative recombination of carriers in the GaxIn1−xP/GaAs double-junction tandem solar cells

Wang

Ning

Zheng

et al. 2013

Solar Energy Materials and Solar Cells

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Temperature and injection current dependent electroluminescence study of GaInP/AlGaInP quantum well laser diode grown using tertiarybutylarsine and tertiarybutylphosphine

Cited by 3 publications

References 21 publications

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Temperature- and current-dependent spontaneous emission study on 2 µm InGaSb/AlGaAsSb quantum well lasers

Radiative recombination of carriers in the GaxIn1−xP/GaAs double-junction tandem solar cells

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