Temperature and stress dependent properties of barrier type anodic Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; MIM capacitor

Kannadassan, D.; Karthik, R.; Mallick, P. S.; Baghini, Maryam Shojaei

doi:10.1109/icemelec.2012.6636238

Cited by 2 publications

(2 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the present work, the device current change is about 20 nA/°C, whereas in the said work, it is about 0.088 nA/°C. Similarly, the effect of thin alumina dielectric layer on the temperature response is lower than that of the h-BTNC layer …”

Section: Resultsmentioning

confidence: 97%

Organic Field-Effect Transistor-Based Ultrafast, Flexible, Physiological-Temperature Sensors with Hexagonal Barium Titanate Nanocrystals in Amorphous Matrix as Sensing Material

Mandal

Banerjee

Roy

et al. 2018

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Organic field-effect transistors (OFETs) with hexagonal barium titanate nanocrystals (h-BTNCs) in amorphous matrix as one of the bilayer dielectric systems have been fabricated on a highly flexible 10 μm thick poly(ethylene terephthalate) substrate. The device current and mobility remain constant up to a bending radius of 4 mm, which makes the substrate suitable for wearable e-skin applications. h-BTNC films are found to be highly temperature-sensitive, and the OFETs designed based on this material showed ultraprecision measurement (∼4.3 mK), low power (∼1 μW at 1.2 V operating voltage), and ultrafast response (∼24 ms) in sensing temperature over a range of 20−45 °C continuously. The sensors are highly stable around body temperature and work at various extreme conditions, such as under water and in solutions of different pH values and various salt concentrations. These properties make this sensor unique and highly suitable for various healthcare and other applications, wherein a small variation of temperature around this temperature range is required to be measured at an ultrahigh speed.

show abstract

Section: Resultsmentioning

confidence: 97%

Organic Field-Effect Transistor-Based Ultrafast, Flexible, Physiological-Temperature Sensors with Hexagonal Barium Titanate Nanocrystals in Amorphous Matrix as Sensing Material

Mandal

Banerjee

Roy

et al. 2018

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…The capacitance exhibits very good stability in terms of frequency (close to 3% variation in the frequency range between 10 3 and 10 6 Hz). This value is better than previous reports in the literature using anodic alumina as the dielectric [7], [9], [11]. The variation of the value of the capacitance in terms of frequency is attributed to charge traps with different time constants in the dielectric layer and at the interface with the electrodes [7].…”

Section: Resultsmentioning

confidence: 34%

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Hourdakis

Travlos

Nassiopoulou

2015

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

We report on a high-performance metal-insulatormetal (MIM) capacitor using a barrier-type anodic alumina as dielectric and exhibiting a capacitance density as high as 10 fF/μm 2 with leakage current density lower than 10 −8 A/cm 2 . The device is shown to be very stable in terms of frequency, showing a capacitance variation less than 3% in the frequency range between 10 3 and 10 6 Hz. A loss tangent <0.1 is shown for the anodic alumina used. Moreover, by introducing nanomodulation to the capacitor electrode, the effective surface area of the capacitor is increased, allowing the use of thicker dielectric layers for the same value of capacitance density. The use of thicker dielectric layers is shown to decrease the leakage current by an order of magnitude and the nonlinearity coefficient α by a factor of 1.8 for the larger capacitance density devices. These results suggest a novel strategy for reducing the α coefficient of a MIM capacitor without decreasing the capacitance density. IndexTerms-Anodic alumina, high-k dielectric, metal-insulator-metal (MIM) capacitor.

show abstract

Temperature and stress dependent properties of barrier type anodic Al<inf>2</inf>O<inf>3</inf> MIM capacitor

Cited by 2 publications

References 14 publications

Organic Field-Effect Transistor-Based Ultrafast, Flexible, Physiological-Temperature Sensors with Hexagonal Barium Titanate Nanocrystals in Amorphous Matrix as Sensing Material

Organic Field-Effect Transistor-Based Ultrafast, Flexible, Physiological-Temperature Sensors with Hexagonal Barium Titanate Nanocrystals in Amorphous Matrix as Sensing Material

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

Contact Info

Product

Resources

About