Temperature and wavelength dependence of gain and threshold current detuning with cavity resonance in vertical-cavity surface-emitting lasers

Wu, Jian; Xiao, Wen; Lu, Yueyue

doi:10.1049/iet-opt:20070039

Cited by 7 publications

(3 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…That is to say, although the cavity mode matches with the gain peak at T alig , the corresponding gain is not highest. These results agree with the significant experiments on power saturation of 0.8 µm VCSELs [28,29].…”

Section: Temperature Dependence Of Threshold Currentsupporting

confidence: 92%

Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks

Zhang¹,

Zeng²,

Zhang³

et al. 2013

Laser Phys. Lett.

View full text Add to dashboard Cite

We propose a new structure design and analysis of high-temperature (>350 K) operating 795 nm vertical-cavity surface-emitting lasers (VCSELs) for 87 Rb based chip-scale atomic clocks (CSACs). Compositions and thicknesses of the InAlGaAs/AlGaAs multiple quantum wells (MQWs) are optimized for high optical gain at elevated temperatures. The temperature sensitivity of the threshold current is estimated by calculating the temperature dependence of the cavity-mode gain. A self-consistent VCSEL model based on quasi-3D finite element analysis is employed to investigate the temperature distribution and output of the proposed structure. An output of 1 mW with a 3 dB bandwidth of 6 GHz is obtained from a 3 µm aperture VCSEL under 2.4 mA current at temperature higher than 340 K. These findings indicate that high-gain QWs and gain-offset consideration are especially crucial to make high-performance VCSELs at elevated temperatures.

show abstract

Section: Temperature Dependence Of Threshold Currentsupporting

confidence: 92%

Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks

Zhang¹,

Zeng²,

Zhang³

et al. 2013

Laser Phys. Lett.

View full text Add to dashboard Cite

show abstract

“…When the two coincide, the electrical pumping required (carrier density) for lasing is minimised; however, owing to the large difference in the shift of these wavelengths with temperature, it is advantageous to have a detuning at room temperature. The spectral peak of the gain shifts at ~0.3 nm/K, associated with bandgap narrowing, compared to ~0.06-0.07 nm/K associated with refractive index shift for the cavity mode; hence, a detuning of the cavity mode to the long wavelength side of the gain spectrum means that the alignment occurs above the room temperature [14]. With target operation ≥70°C, the detuning should be sufficient to facilitate the alignment at these temperatures.…”

Section: Gain-peak Detuningmentioning

confidence: 99%

VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications

Baker

Allford

Gillgrass

et al. 2022

IET Optoelectronics

View full text Add to dashboard Cite

A vertical cavity surface emitting laser (VCSEL) quick fabrication (VQF) process is applied to epitaxial materials designed for miniature atomic clock applications (MACs). The process is used to assess material quality and uniformity of a full 100 mm (4-inch) wafer against the stringent target specification of VCSELs for MACs. Target specifications in optical power (>0.6 mW) and differential efficiencies (<0.5 W/A) are achieved over large portions of a wafer; however, the variation in the oxide aperture diameter is shown to limit the yield. The emission of the fundamental mode at 894.6 nm at 70 ℃ is met over a significant area of the wafer for ~4 μ m aperture multi-mode devices. The consideration of the on-wafer variation reveals that further optimisation is required to increase the device yield to levels required for volume manufacture.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

show abstract

“…The method and the device structure used for the gain measurement of the VCSEL here are the same as those mentioned in the literature. [13,14] The samples were fabricated using the AlInGaAs-AlGaAs VCSEL structure. The active region of the VCSEL was composed of three 7.5 nm (Al 0.09 Ga 0.91 ) 0.94 In 0.06 As quantum wells.…”

Section: Determination Of Gain Detuningrelated Loss Currentmentioning

confidence: 99%

An efficient approach to characterizing and calculating carrier loss due to heating and barrier height variation in vertical-cavity surface-emitting lasers

Summers

2010

Chinese Phys. B

View full text Add to dashboard Cite

It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser (VCSEL). However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty in deriving the parameters relating to the quantum well structure. In this paper, we describe an efficient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AlInGaAs–AlGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs.

show abstract

Temperature and wavelength dependence of gain and threshold current detuning with cavity resonance in vertical-cavity surface-emitting lasers

Cited by 7 publications

References 10 publications

Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks

Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks

VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications

An efficient approach to characterizing and calculating carrier loss due to heating and barrier height variation in vertical-cavity surface-emitting lasers

Contact Info

Product

Resources

About