Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes

Abstract

Planar Gunn diodes on In 0.53 Ga 0.47 As with lengths between 2 and 5 µm have been fabricated and characterized in a temperature range of 10 to 300 K. Two different oscillation regimes are observed depending on temperature. At the higher values, the frequency of the oscillations decreases as the bias increases, as expected for a well-established transit-time domain mode. But below approximately 75 K, the behavior is the opposite, the frequency of the Gunn oscillations increases with the bias. This fact, together with a much lower amplitude of the oscillations, indicate the possible switch to a different oscillation mode in which the domains are not able to attain their complete maturation before reaching the anode.

Advanced Micron Sized Gunn Diode Based on Graded-Gap GaPAs – GaInAs

“…The research results are consistent with similar studies [11,[14][15][16][17][18][19][20]. In recent years, planar Gunn diodes have shown consistent improvements in frequency [15][16][17][18][19]. A planar Gunn diode made from In0.53Ga0.47As on an InP substrate has a maximum output power of 98 W (10.1 dBm, 0.64 MW/m 2 ) with a device geometry of 1.3 m  120 m at 164 GHz [15].…”

“…The research results are consistent with similar studies [11,[14][15][16][17][18][19][20]. In recent years, planar Gunn diodes have shown consistent improvements in frequency [15][16][17][18][19].…”

Instability of Traveling Pulses in Nonlinear Diffusion-Type Problems and Method to Obtain Bottom-Part Spectrum of Schrödinger Equation with Complicated Potential

“…It was related to the Gunn effect in semiconductors [9]. At that time, the effect was a fascinating, challenging topic, and, up to now, it still attracts a great deal of attention from researchers [10][11][12][13][14][15].…”