Temperature coefficient of resistivity of silicon and germanium near room temperature

The metal-insulator transition in disordered solids: How theoretical prejudices influence its characterization A critical review of analyses of experimental data

“…, see Figure 1 of the study by Bullis et al, 62 performed at NIST. (Si:P does not comply with Mooij's rule.)…”

Semiconductor measurement technology

“…After a deglaze in 10 perc^ent hydrofluoric acid solution, the base drivein diffusion was at 1100°C for 18 min in wet oxygen, followed by 40 min in dry oxygen, followed by 15 Line drawings of sheet resistors 3.22 and 3.28 are shown in figure 13.…”

“…65-66) is Y(x,t) = Bisinh(qx) + B2COsh(qx) + B3sin(qx) + B4COs(qx), (13) where q = (pAoo^/EI)^, p is the volume density of the tool material, and A is the cross sectional area of the tool. Making use of eqs (12) in eq (13) and introducing the dimensionless* variables Z = q8,, N = x/H, the solution may be shown to be in the It should be noted that the first term of eq (14) is just the solution of the driven uniform beam in the unloaded phase of operation, Y (N,t). Hence, in the limit as the tool tip-wire force goes to zero, Y(N,t) approaches the previously determined solution (NBS Spec.…”

“…Current was passed between contacts Ii and I2, shown in figure 13, and the potential between contacts Vi and V2 was measured by means of a digital voltmeter with 1 yV resolution. The linearity of the current-voltage characteristics was studied for various values of current.…”

Semiconductor measurement technology

“…"^In addition, the Program receives support from the Defense Nuclear Agency (DNA) (1) completion of the systematic study of the effects of surface preparation and probe material on the empirical calibration between specimen resistivity and spreading resistance of n-and p-type silicon; (2) initial evaluation of the nucleartrack technique for quantitative determination of trace amounts of boron in silicon; (3) development of procedures for using an optical research microscope to make accurate measurements of the width of a clear line in a completely or nearly opaque background or of an opaque line in a clear background down to 0.5 ym; (4) design of a compact cross-bridge test structure for electrical measurement of line width and sheet resistance in minimum line-width geometries ; (5) completion of the initial phase of the study of the particle-impact noise detection test for screening devices for the presence of loose particles in the package; (6) demonstration of a greater-thanexpected line resolution capability for the scanning acoustic microscope; and (7) development of a nondestructive technique to measure the onset of second breakdown in forward-biased, medium-power transistors . New tasks were undertaken to investigate techniques for characterizing extrinsic silicon for use in infrared detector arrays, to evaluate the application of x-ray photoelectron spectroscopy to diagnostic measurements in semiconductor device processing, and to develop test structures with integral signalprocessing circuitry to allow high-speed measurement of small currents.…”