Temperature-controlled synthesis of Zn2GeO4 nanowires in a vapor–liquid–solid mode and their photoluminescence properties

Kim, Hyoun Woo; Na, Han Gil; Yang, Juchan; Lee, Chongmu

doi:10.1016/j.cej.2011.04.010

Cited by 13 publications

(6 citation statements)

References 32 publications

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“…Recently, applications of ZnO nanorods and thin films in energy conversion, such as in electronic and optoelectronic devices such as transparent conductors, solar cell windows, gas sensors, surface acoustic wave (SAW) devices, heat mirrors, dye sensitized solar cells and thermoelectronics, have attracted increasing research interest [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Optical and photoluminescence properties of Ga doped ZnO nanostructures by sol-gel method

et al. 2012

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Zinc oxide (ZnO) nanocrystallites with different Ga-doping levels were successfully prepared by spin coating sol-gel technique. The morphological properties of Ga doped ZnO films were studied by atomic force microscopy (AFM). Alignment of ZnO nanorods with respect to the substrate depends on the amount of Ga dopant content. The dopant content varies from 1 % to 4 %, based on Ga-doping levels. The optical properties of the ZnO nanocrystallites following Ga-doping were also investigated by UV-Visible absorption and Photoluminescence spectra. Our results indicate that Gadoping can change the energy-band structure and effectively adjust the intensity of the luminescence properties of ZnO nanocrystallites. Transmittance spectra of the films indicate that the films have high transparency. The refractive index dispersion was analyzed by single oscillator model developed by Wemple and DiDomenico. The oscillator energy, dispersion energy, high frequency dielectric constant values for the films were determined were calculated and it is found that the optical parameters are changed with Ga-doping content.

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Section: Introductionmentioning

confidence: 99%

Optical and photoluminescence properties of Ga doped ZnO nanostructures by sol-gel method

et al. 2012

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“…34,35 By doping with Mn 2+ , it has been demonstrated as a highly efficient greenemitting phosphor due to energy transfer from the Zn 2 GeO 4 host to Mn 2+ on tetrahedral lattice sites. [36][37][38][39][40][41] Its excitation (PLE) bands cover almost the whole spectral window from 250 to 500 nm (see Fig. 1b).…”

Section: Introductionmentioning

confidence: 99%

Near-infrared down-conversion in Mn2+–Yb3+ co-doped Zn2GeO4

2013

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“…In general, they have been assigned to defect related states that could involve Zn i and oxygen vacancies . In particular, undoped Zn 2 GeO 4 microwires obtained by thermal methods show complex green (about 2.2 eV) and UV (3.3 eV) luminescence bands. ,, Figure a shows the CL image of a NL structure, where a remarkable increase in the CL intensity at the a -GeO 2 beads is noticed. Locally CL spectra recorded at the NW and at the bead are essentially the same and correspond to the UV Zn 2 GeO 4 emission (Figure d), which indicates that no new bands arise from the amorphous beads.…”

Section: Resultsmentioning

confidence: 99%

Zn₂GeO₄/SnO₂ Nanowire Heterostructures Driven by Plateau–Rayleigh Instability

Dolado

Renforth

Nunn

et al. 2019

Crystal Growth & Design

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Herein, we report the formation of a particular core–shell structure, with a zinc germanate (Zn2GeO4) nanowire core and a discontinuous shell of SnO2 nanocrystals, obtained in a single-step process. We propose a growth model that combines the Plateau–Rayleigh mechanism to produce a pattern of amorphous germanium oxide (a-GeO2) particles along the Zn2GeO4 nanowire and the subsequent growth of well-faceted SnO2 crystals when the nanowire orientation meets good lattice matching conditions. In this latter case, the linear array of a-GeO2 particles acts as nucleation sites for the SnO2 crystallites, leading to a skewer-like morphology that retains the periodicity of the Plateau–Rayleigh process. Otherwise, nanowires with different orientations appear decorated with a pattern of a-GeO2 beads mimicking a necklace. Atomic resolution electron microscopy has been used to characterize the Zn2GeO4/SnO2 nanoheterostructures. In addition, optical confinement effects have been observed in the luminescence maps and spectra, which have potential for further exploitation in the design of optical microcavities.

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Temperature-controlled synthesis of Zn2GeO4 nanowires in a vapor–liquid–solid mode and their photoluminescence properties

Cited by 13 publications

References 32 publications

Optical and photoluminescence properties of Ga doped ZnO nanostructures by sol-gel method

Optical and photoluminescence properties of Ga doped ZnO nanostructures by sol-gel method

Near-infrared down-conversion in Mn2+–Yb3+ co-doped Zn2GeO4

Zn₂GeO₄/SnO₂ Nanowire Heterostructures Driven by Plateau–Rayleigh Instability

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Temperature-controlled synthesis of Zn2GeO4 nanowires in a vapor–liquid–solid mode and their photoluminescence properties

Cited by 13 publications

References 32 publications

Optical and photoluminescence properties of Ga doped ZnO nanostructures by sol-gel method

Optical and photoluminescence properties of Ga doped ZnO nanostructures by sol-gel method

Near-infrared down-conversion in Mn2+–Yb3+ co-doped Zn2GeO4

Zn2GeO4/SnO2 Nanowire Heterostructures Driven by Plateau–Rayleigh Instability

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Zn₂GeO₄/SnO₂ Nanowire Heterostructures Driven by Plateau–Rayleigh Instability