Temperature Cycling Reliability of High-Temperature Lead-Free Die-Attach Technologies

Quintero, Pedro O.; McCluskey, F. Patrick

doi:10.1109/tdmr.2011.2140114

Cited by 65 publications

(18 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Some Pb-based solders are viable for operation above 250°C; however, the eutectic tin-lead solders fail near 200°C and those with higher lead content fail near 300°C [62]. In addition, the world-wide push to eliminate Pb from electronic assemblies tends to limit their use to research-based prototypes only.…”

Section: Packagingmentioning

confidence: 99%

See 1 more Smart Citation

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Mantooth

Glover

Shepherd

2014

IEEE J. Emerg. Sel. Topics Power Electron.

215

View full text Add to dashboard Cite

The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described. A synopsis of recent complementary technological developments in passives, integrated driver, and protection circuitry and electronic packaging are described, followed by an outline of the applications that stand to be impacted. A glimpse into the future based on the current technological trends is offered.Index Terms-Gallium nitride (GaN), power electronics, power integrated circuits, power semiconductor devices, silicon carbide (SiC), wide bandgap semiconductors.

show abstract

Section: Packagingmentioning

confidence: 99%

“…Ag-based sintering is a Pb-free approach that exhibits excellent electrical and thermal conductivity that can be processed at 300°C while the melting point is at or near that of Ag (962°C) [62].…”

Section: Packagingmentioning

confidence: 99%

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Mantooth

Glover

Shepherd

2014

IEEE J. Emerg. Sel. Topics Power Electron.

215

View full text Add to dashboard Cite

show abstract

“…High-lead solders such as Pb5Sn and Pb2SnAg2.5 are the standard materials for improving the reliability of soldered die attachments in high temperature applications, but lead is restricted to be employed in electronic packaging due to health and environment concerns [1,2]. Thus, new bonding materials and technologies for high temperature and high density power die attachments have been under intensive investigation.…”

Section: Introductionmentioning

confidence: 99%

Time-Efficient Sintering Processes to Attach Power Devices Using Nanosilver Dry Film

Dai¹,

Li²,

Agyakwa³

et al. 2017

Journal of Microelectronics and Electronic Packaging

View full text Add to dashboard Cite

(2017) Time-efficient sintering processes to attach power devices using nanosilver dry film. Journal of Microelectronics and Electronic Packaging, 14 (4 A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription.For more information, please contact eprints@nottingham.ac.uk Abstract: Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time scales of minutes to a few hours have been widely reported. This paper presents our work on time-efficient sintering, using nanosilver dry film and an automatic die pick and place machine, resulting in process times of just a few seconds. The combined parameters of sintering temperature 250 C, sintering pressure 10 MPa and sintering time 5 s were selected as the benchmark process to attach 2 mm × 2 mm × 0.5 mm dummy Si devices. Then the effects of either the sintering temperature (240 to 300 C), time (1 to 9 s) or pressure (6 to 25 MPa) on the porosity and shear strength of the sintered joints were investigated with 3 groups and a total of 13 experimental trials. The average porosities of 24.6 to 46.2% and shear strengths of 26.1 to 46.6 MPa are comparable with and/or even better than those reported for sintered joints using wet nanosilver pastes. Their dependences on the sintering temperature, time and pressure are further fitted to equations similar to those describing the kinetics of sintering processes of powder compacts. The equations obtained can be used to not only reveal different mechanisms dominating the densification and bonding strength, but also anticipate the thermal-induced evolutions of microstructures of these rapidly sintered joints during future reliability tests and/or in service.

show abstract

“…Out of the four IGBT devices tested there was one device (Sample 3) that failed significantly earlier than the others, after just 10158 P T t(s) 3 1 3 1 6 26 29 power cycles (see Figure 10). This prematu caused by some error of the cold-plate m other unknown random error.…”

Section: Resultsmentioning

confidence: 99%

Investigation of die-attach degradation using power cycling tests

Sárkány

Vass-Várnai

Rencz

2013

2013 IEEE 15th Electronics Packaging Technology Conference (EPTC 2013)

View full text Add to dashboard Cite

This article describes a complex measurement and simulation based characterization method of high current IGBT modules. The method begins with thermal transient tests aimed at the investigation of the thermal behavior of the module and the creation of a thermal map of the heat conduction path using structure functions. This information can later be used for different purposes, such as the calibration of a detailed thermal simulation model of the system or as a reference for later power cycling reliability tests. During this test the degradation of the die attach layer as a result of power cycles is tracked as it is indicated by the structure functions. In the article we demonstrate the steps of this method with a detailed case-study.

show abstract

Temperature Cycling Reliability of High-Temperature Lead-Free Die-Attach Technologies

Cited by 65 publications

References 11 publications

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

Time-Efficient Sintering Processes to Attach Power Devices Using Nanosilver Dry Film

Investigation of die-attach degradation using power cycling tests

Contact Info

Product

Resources

About