Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors

Bermundo, Juan Paolo; Kesorn, Ployrung; Yoshida, N.; Safaruddin, Aimi Syairah; Uraoka, Yukiharu

doi:10.1088/1361-6463/ac3170

Cited by 5 publications

(3 citation statements)

References 29 publications

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“…9 Our previous work has demonstrated that the incorporation of high-k BTO nanoparticles into a polymer to form a polymer nanocomposite is an effective gate insulator film for high performance amorphous oxide semiconductor (AOS) TFTs. 10 AOS TFTs are competent components for scalable-area electronics due to their attractive features of high mobility, low fabrication temperature, solution-process compatibility, and flexibility. 11 Numerous research has been performed to explore the potential of AOS TFT devices for various electronic purposes such as display, memory, and various sensors applications.…”

Section: ■ Introductionmentioning

confidence: 99%

High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

Safaruddin,

Bermundo,

et al. 2023

ACS Omega

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Ferroelectric nanoparticles have attracted much attention for numerous electronic applications owing to their nanoscale structure and size-dependent behavior. Barium titanate (BTO) nanoparticles with two different sizes (20 and 100 nm) were synthesized and mixed with a polysiloxane (PSX) polymer forming a nanocomposite solution for high-k nanodielectric films. Transition from the ferroelectric to paraelectric phase of BTO with different nanoparticle dimensions was evaluated through variable-temperature X-ray diffraction measurement accompanied by electrical analysis using capacitor structures. A symmetric single 200 peak was constantly detected at different measurement temperatures for the 20 nm BTO sample, marking a stable cubic crystal structure. 100 nm BTO on the other hand shows splitting of 200/002 peaks correlating to a tetragonal crystal form which further merged, thus forming a single 200 peak at higher temperatures. Smaller BTO dimension exhibits clockwise hysteresis in capacitance–voltage measurement and correlates to a cubic crystal structure which possesses paraelectric properties. Bigger BTO dimension in contrast, demonstrates counterclockwise hysteresis owing to their tetragonal crystal form. Through further Rietveld refinement analysis, we found that the tetragonality (c/a) of 100 nm BTO decreases at a higher temperature which narrows the hysteresis window. A wider hysteresis window was observed when utilizing 100 nm BTO compared to 20 nm BTO even at a lower loading ratio. The present findings imply different hysteresis mechanisms for BTO nanoparticles with varying dimensions which is crucial in understanding the role of how the BTO size tunes the crystal structures for integration in thin-film transistor devices.

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Section: ■ Introductionmentioning

confidence: 99%

High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

Safaruddin,

Bermundo,

et al. 2023

ACS Omega

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“…However, the leakage current of film devices fabricated by the solution method can only reach less than 10 −6 –10 −7 A/cm 2 @ 1.0 MV/cm [ 15 , 16 ]. Therefore, the preparation of metal oxide films with excellent properties by solution method at low temperature has attracted extensive attention from researchers [ 12 , 17 , 18 , 19 ]. Solution-based manufacturing significantly reduces manufacturing costs by eliminating vacuum deposition processes and replacing them with printable precursor materials.…”

Section: Introductionmentioning

confidence: 99%

Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films

Pan

Liang

et al. 2022

Membranes

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Capacitors play an increasingly important role in hybrid integrated circuits, while the MIM capacitors with high capacitance density and small thickness can meet the needs of high integration. Generally speaking, the films prepared with a single metal oxide dielectric often achieve a breakthrough in one aspect of performance, but dielectric layers are required to be improved to get better performance in leakage current, capacitance density, and transmittance simultaneously in modern electronic devices. Therefore, we optimized the performance of the dielectric layers by using multiple metal oxides. We combined zirconia, yttria, magnesium oxide, alumina, and hafnium oxide with the solution method to find the best combination of these five metal oxides. The physical properties of the multi-component films were measured by atomic force microscopy (AFM), ultraviolet-visible spectrophotometer, and other instruments. The results show that the films prepared by multi-component metal oxides have good transmittance and low roughness. The thicknesses of all films in our experiment are less than 100 nm. Then, metal–insulator–metal (MIM) devices were fabricated. In addition, we characterized the electrical properties of MIM devices. We find that multi-component oxide films can achieve good performances in several aspects. The aluminum-magnesium-yttrium-zirconium-oxide (AMYZOx) group of 0.6 M has the lowest leakage current density, which is 5.03 × 10−8 A/cm2 @ 1.0 MV/cm. The hafnium-magnesium-yttrium-zirconium-oxide (HMYZOx) group of 0.8 M has a maximum capacitance density of 208 nF/cm2. The films with a small thickness and a high capacitance density are very conducive to high integration. Therefore, we believe that multi-component films have potential in the process of dielectric layers and great application prospects in highly integrated electronic devices.

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“…With the rapid development of film deposition technology, the recent use of solution-based processes alleviates the shortcomings of the high cost of the vacuum method which is not suitable for industrial development. Therefore, the preparation of metal oxide films with excellent properties by solution method at low temperature has attracted extensive attention of researchers [4][5] . Solution-based manufacturing significantly reduces manufacturing costs by eliminating vacuum deposition processes and replacing them with printable precursor materials.…”

mentioning

confidence: 99%

6.2: Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films

Liang

Yao

et al. 2023

Symp Digest of Tech Papers

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Temperature dependence and functionalization of solution processed high-k hybrid gate insulators for high performance oxide thin-film transistors

Cited by 5 publications

References 29 publications

High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

High-k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors

Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films

6.2: Application of Solution Method to Prepare High Performance Multicomponent Oxide Thin Films

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