Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors

Wang, Jun; Chen, Xiaoshuang; Hu, Weida; Ye, Zhenghua; Lin, Chun; Hu, Xiaoning; Guo, Jin; Xie, Feng; Zhou, Jie; Liang, Jian; Wang, Xiaofang; Lü, Wei

doi:10.1016/j.infrared.2013.08.007

Cited by 15 publications

(7 citation statements)

References 34 publications

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“…In order to better understand the dark current mechanisms of the p-on-n MCT diode in this study, the different components of dark current were decomposed. Table 1 summarizes the main contributions of dark current in MCT photodiodes [12][13][14]21]. In the equations, n i is the intrinsic carrier concentration, N a and N d are the acceptor and donor concentration at p and n region, µ n , µ p , τ n and τ p are the minority carrier mobility and lifetime.…”

Section: Resultsmentioning

confidence: 99%

“…) exp The characteristic parameters of the p-on-n diode as function of temperature are extracted and plotted in figure 6. It can be seen in figure 6(a) that the donor concentration in the n-type region depends weakly on temperature, which is different with the characteristic of n-on-p MCT diodes [12,13]. In the p-on-n MCT diodes, the n-type doping is achieved by doping indium, while in n-on-p diodes, it is mainly caused by the implantation damages.…”

Section: Dark Current Mechanism Equationsmentioning

confidence: 96%

“…In the process of optimizing the p-on-n MCT diode performance, it is necessary to analyze the dark current mechanisms in order to better understand the reasons of limiting diode dark current. Several dark current analysis studies on n-on-p MCT photodiodes have been carried out, which give researchers good references to improve the performance of infrared detectors [12][13][14][15][16]. In this study, the dark current mechanisms are investigated for long-wavelength infrared (LWIR) p-on-n MCT diode at different temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of temperature dependent dark current mechanisms for long-wavelength infrared p-on-n HgCdTe detectors

Li¹,

Wang²,

Lin³

et al. 2021

Semicond. Sci. Technol.

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The dark current density versus voltage (J–V) curve of long-wavelength infrared (LWIR) p-on-n mercury cadmium telluride (HgCdTe, MCT) photodiode is measured in the temperature range of 40 K–130 K in this study. The dark current mechanisms, namely diffusion, generation–recombination (GR), trap-assisted tunneling, band-to-band tunneling (BBT) and shunt current, are investigated for LWIR p-on-n MCT diode at different temperatures. The results show that the dark current is dominated by diffusion current at low reverse bias when the operating temperature is above 65 K. As the operating temperature decreases, GR current and shunt current gradually become the main ingredient of dark current. In the high reverse bias region, the contribution of BBT mechanism accounts for the largest proportion when the operating temperature is below 75 K. The extracted fitting parameters show that the donor concentration in the n-type region of p-on-n MCT diode display better temperature stability compared with that of n-on-p diodes. Because the thermal excitation effect increases with the increase of temperature, the equivalent trap level moves from shallow acceptor level to deep acceptor level, and the trap density increases from 1.1 × 1010 to 6.0 × 1012 cm−3 when the operating temperature is increased from 80 K to 130 K.

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Section: Resultsmentioning

confidence: 99%

Section: Dark Current Mechanism Equationsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis of temperature dependent dark current mechanisms for long-wavelength infrared p-on-n HgCdTe detectors

Li¹,

Wang²,

Lin³

et al. 2021

Semicond. Sci. Technol.

Self Cite

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“…Thus, it is necessary to make some simplifications. Quan et al [23, 25] and Wang et al [24] have proposed simple approximations to FDI. However, these approximations have only been validated for T = 77–120 K. The HgCdTe device studied in this work operates at T = 200 K. In our case, computations were performed using the Fermi‐Dirac statistics for a non‐degenerate semiconductor model with parabolic energy bands.…”

Section: Simulation Procedures Against Experimental Resultsmentioning

confidence: 99%

Theoretical modelling of mercury cadmium telluride mid‐wave detector for high temperature operation

Martyniuk

Gawron

Stanaszek

et al. 2014

IET Optoelectronics

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This study reports on photoelectrical performance: detectivity and response time of mid-wave infrared (MWIR) (111) mercury cadmium telluride (MCT/HgCdTe) detectors under high operating temperature (HOT) conditions. The detector structure was simulated with the numerical platform APSYS by Crosslight Inc. A detailed analysis of the detectivity and response time as a function of device architecture and applied bias was performed to optimise the working conditions. The detectivity and time response of the MWIR HgCdTe detector with 50% cut-off wavelength of l c ≃ 5.3 μm at T = 200 K were estimated to be D * = 2.6 × 10 11 cm Hz 1/2 /W and t s ≃ 1650 ps, respectively, for V = 200 mV with a series resistance, R Series = 380 Ω. Reducing the series resistance limits the response time to the t s ≃ 500 ps range.

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“…In this PMWsbased device, the measured dark current is just 2.5 fA at the bias of 1 V, which guarantees the device to operate under very weak optical signals by setting the low noise level of the photodetector. The dark current closely related to the defect state is called trap-assistant-tunnel current and the ultra-low dark current can be attributed to the high crystal quality (text S3) 27 .…”

Section: Introductionmentioning

confidence: 99%

Ultralong free-standing single crystal perovskite microwires with extremely low dark current

Geng

Feng

Tian

et al. 2021

Preprint

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Super long perovskite microwires (PMWs) are in a great demand in many fields such as low-loss microcables and integrated optical waveguide. Despite decades of research into PMWs, single crystal PMWs with several centimeters long have not been obtained. Here, ultralong (up to 7.6 centimeters) monoclinic crystal structure CH3NH3PbI3·DMF PMWs have been synthesized. The high-quality microwire exhibits long carrier lifetime of 1775.7 ns. The as-prepared free-standing PMWs can be integrated to any arbitrary substrate and 808 nm near-infrared photodetectors have been successfully demonstrated. The fabricated device shows a high light on/off ratio of 1.79×106 and an extremely low dark current of 2.5 fA at 1 V bias. This work provides a strategy for the solution growth of ultralong microwires.

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Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors

Cited by 15 publications

References 34 publications

Analysis of temperature dependent dark current mechanisms for long-wavelength infrared p-on-n HgCdTe detectors

Analysis of temperature dependent dark current mechanisms for long-wavelength infrared p-on-n HgCdTe detectors

Theoretical modelling of mercury cadmium telluride mid‐wave detector for high temperature operation

Ultralong free-standing single crystal perovskite microwires with extremely low dark current

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