Temperature dependence of 63 Ni–Si betavoltaic microbattery

Liu, Yunpeng; Xiaohong, Guo; Jin, Zhangang; Tang, Xiaobin

doi:10.1016/j.apradiso.2018.01.017

Cited by 8 publications

(2 citation statements)

References 21 publications

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“…In [91] the difference between the predicted and measured V oc values was smaller than that in [53], nevertheless, the predicted values were larger than measured ones. It was observed in [93] that V oc and maximum power P m decreased linearly at low temperatures of 213-273 K and decreased exponentially at high temperatures of 273-333 K in Si-based converters that indicates a change of the mechanism that determines the leakage current. However, in the calculation, the V oc and P m always decreased linearly at both low and high temperatures.…”

Section: Temperature Effect On Output Parameters Of Betavoltaic Cellsmentioning

confidence: 99%

“…For using betavoltaic batteries at extreme temperatures it is useful to predict their output parameters to optimize the material choice and device design. A few papers have carried out experimental and theoretical studies of temperature effect on the output parameters of betavoltaic cells [12,54,[91][92][93][94][95]. However, the main obstacle to the correct prediction of output parameters of betavoltaic cells as a function of temperature is insufficient information about the real parameters of semiconductor structures and their temperature dependencies.…”

Section: Temperature Effect On Output Parameters Of Betavoltaic Cellsmentioning

confidence: 99%

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Prediction of Betavoltaic Battery Parameters

Yakimov

2023

Energies

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The approaches for predicting output parameters of betavoltaic batteries are reviewed. The need to develop a strategy for predicting these parameters with sufficient accuracy for the optimization of betavoltaic cell design without using the simple trial and error approach is discussed. The strengths and weaknesses of previously proposed approaches for the prediction are considered. Possible reasons for the difference between the calculated and measured parameters are analyzed. The depth dependencies of beta particles deposited energy for Si, SiC, GaN, and Ga2O3 and 20% purity 63Ni and titanium tritide as radioisotope sources are simulated using the Monte Carlo algorithm taking into account the full beta energy spectrum, the isotropic angular distribution of emitted electrons and the self-absorption inside the radioisotope source for homogeneously distributed emitting points. The maximum short circuit current densities for the same semiconductors and radioisotope sources are calculated. The methodology allowing the prediction of betavoltaic cell output parameters with accuracy no worse than 30% is described. The results of experimental and theoretical investigations of the temperature dependence of betavoltaic cell output parameters are briefly discussed. The radiation damage by electrons with the subthreshold energy and the need to develop models for its prediction is considered.

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Section: Temperature Effect On Output Parameters Of Betavoltaic Cellsmentioning

confidence: 99%