Temperature dependence of aging drift in CuNi films on alumina ceramic substrates

The contact behaviour in low‐ohmic thin film metallization systems is of interest for the design of circuits with thin film resistors. Considering low‐ohmic resistive films (ϱ = 50 × 10−8 Ω m) with a typical metallization layer (ϱ = 1.67 × 10−8 Ω m), finite‐element simulations are reported which give quantitative results of characteristic parameters of the contact such as the contact resistance and its temperature coefficient, the effective contact length and the enhancement of the current density. The influence of variations in the lay‐out at the contact edge is shown.

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“…1. Table 1 summarises the calculated resistances and their partitions into the different regions of the contact system according to (4).…”

Section: Characteristic Contact Parametersmentioning

confidence: 99%

“…Reported interface layers are e.g. NiCr [4,51 in the case of constantan and e.g. Cr, Ti, or NiCr [2, 31 in the case of copper.…”

Section: Introductionmentioning

confidence: 99%

Simulation of the electric properties of the near-contact area in thin film resistor systems

Griessmann

Brückner

1995

Phys. Stat. Sol. (a)

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Biaxial modulus and coefficient of thermal expansion of Cu0.57Ni0.42Mn0.01 (constantan) films

Brückner¹

1995

Phys. Stat. Sol. (a)

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Copper-nickel alloys are often used as precision wire resistors with 53 at% Cu, 46 at% Ni, and 1 at% Mn (constantan) [l]. They are also applied for resistive thin films, e.g. in surface mounted resistors [2, 31. For low sheet resistances, the films must be relatively thick (tf 2 1 pm). Especially for such thick films the mechanical stress is important for stability and reliability [4, 51. This correlation has been analysed in this work in order to evaluate the influence of the substrate and to find the relevant mechanical material parameters.Mechanical film stresses result in a curvature of the substrate. By measuring the curvature radii before and after deposition (ro, r), the stress c can be determined from Stoney's equation revised for biaxial stress [6],

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Oxidation behaviour of Cu-Ni(Mn) (constantan) films

et al. 1995

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Temperature dependence of aging drift in CuNi films on alumina ceramic substrates

Cited by 5 publications

References 3 publications

Simulation of the electric properties of the near-contact area in thin film resistor systems

Simulation of the electric properties of the near-contact area in thin film resistor systems

Biaxial modulus and coefficient of thermal expansion of Cu0.57Ni0.42Mn0.01 (constantan) films

Oxidation behaviour of Cu-Ni(Mn) (constantan) films

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