Temperature dependence of avalanche multiplication in submicron silicon devices

massey, Dave; David, J.P.R.; Rees, G.J.

doi:10.1109/essder.2005.1546631

Cited by 3 publications

(3 citation statements)

References 14 publications

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“…The reduced temperature dependence follows simply because carriers then have a shorter distance in which to scatter off phonons before ionising. Similar effects are seen in short GaAs structures 75 and also in Si 76 , though the effect of temperature is weaker in this material, possibly 77 because of its softer ionisation threshold.…”

Section: Temperature Stabilitysupporting

confidence: 64%

Nonlocal impact ionization and avalanche multiplication

Rees¹,

David²

2010

J. Phys. D: Appl. Phys.

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Sheffield S1 3JDIn memory of Peter Robson, who inspired and encouraged scientists and engineers, young and old Abstract Impact ionization and avalanche multiplication are conventionally described in terms of ionization coefficients which depend only upon the local electric field. Such a description takes no account of the effect of ionization dead space, within which the population distribution, and hence the ionization coefficient of carriers injected cool approach equilibrium with the high electric field, inhibiting ionization and reducing multiplication. This effect, which increases in importance as device dimensions are reduced, clearly benefits such high field devices as transistors by suppressing parasitic avalanche multiplication. It also improves the performance of avalanche photodiodes (APDs) by reducing the spatial randomness of impact ionization, so that the resulting excess multiplication noise is also reduced. It reduces temperature sensitivity and may also further enhance APD speed. This article reviews these effects and some theoretical models used to describe them.

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Section: Temperature Stabilitysupporting

confidence: 64%

Nonlocal impact ionization and avalanche multiplication

Rees¹,

David²

2010

J. Phys. D: Appl. Phys.

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“…The electric field dependences of α and β , deduced from the inverse of the mean distance between successive impact ionization events, from the SMC model are shown in figure 6. They are compared with experimental results reported by Massey et al [34,35] and Overstraeten et al [10]. Results from the SMC model are higher than experimental results at all electric fields, except for β at fields below 350 kV/cm.…”

Section: Resultsmentioning

confidence: 64%

A simple Monte Carlo model for prediction of avalanche multiplication process in Silicon

Zhou

Ng²,

Tan³

2012

J. Inst.

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A Simple Monte Carlo model has been developed to model the avalanche characteristics of Silicon. Good agreement with experimental results from Silicon p + -i-n + diodes with i-regions ranging from 0.082 to 0.26 µm, an n + -i-p + diode with an i-region of 0.82 µm and a p + n diode was obtained. Therefore our model can be used to model the avalanche process in diodes with varying electric field profiles. We also studied the competing effects of the ratio of electron to hole ionization coefficients and the dead space on excess noise factor, by varying these parameters in our simulations of ideal p + -i-n + diodes with avalanche regions width of 0.05 to 0.3 µm to cover the electric field range in the measured devices. As avalanche region width reduces from 0.3 to 0.05 µm, the electron to hole ionisation coefficient ratio decreases from 3.42 to 1.23 while the dead space to avalanche width ratio increases from 0.19 to 0.49 for electrons. The former increases the excess noise while the latter suppresses the avalanche noise such that on balance, a weak dependence of excess noise on the avalanche width for w < 0.3 µm was observed in these p + -i-n + diodes, consistent with the excess noise results reported in thin Silicon p + -i-n + diodes.

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“…where d is the total distance and α(E, T ) the impact ionization coefficient, function of the field E and the temperature T via the two experimental parameters a, b. λ = 1/α, represents the length to achieve G = e. The ratio d/λ determines the gain: if two gain layers are implanted at different depths, d 1 , d 2 , they will achieve the same gain when d 1 /λ 1 = d 2 /λ 2 . Figure 3, top panel, shows the dependence of λ upon the field, according to the Massey impact ionization model [24]: in deeper gain layer designs, the drift length d is longer and the electric field lower than for shallower gain layer. The restoration power of the the bias voltage is evaluated by studying the derivative dλ/dE, bottom panel of Figure 3: for very high fields, i.e.…”

Section: Introductionmentioning

confidence: 99%

Silicon Sensors for Future Particle Trackers

Cartiglia,

Arcidiacono,

Borghi

et al. 2020

Preprint

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Several future high-energy physics facilities are currently being planned. The proposed projects include high energy e + e − circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, schedule and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances required to the future silicon tracking systems at the various new facilities, and then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog readout are exploited to meet these new demands.

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Temperature dependence of avalanche multiplication in submicron silicon devices

Cited by 3 publications

References 14 publications

Nonlocal impact ionization and avalanche multiplication

Nonlocal impact ionization and avalanche multiplication

A simple Monte Carlo model for prediction of avalanche multiplication process in Silicon

Silicon Sensors for Future Particle Trackers

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