Temperature Dependence of Current-Voltage Characteristics of Al/Rubrene/n-GaAs (100) Schottky Barrier Diodes

Yüksel, Ömer Faruk; Tuğluoğlu, Nihat; Çalışkan, Fatih; Yıldırım, Murat

doi:10.1016/j.matpr.2016.03.070

Cited by 11 publications

(2 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The interface quality of a metal-semiconductor (MS) device can also affect the performance and the reliability of devices [7]. Since the conduction mechanism is a temperature-dependent event, some electrical measurements of metal-organic-semiconductor devices performed in room temperature may not give detailed information about the barrier structure or the current mechanism of the devices [6].…”

Section: Introductionmentioning

confidence: 99%

Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications

Kaçuş

Şahin

Aydoğan

et al. 2020

Jnl of Sandwich Structures & Materials

View full text Add to dashboard Cite

The temperature dependence of the current–voltage and room temperature capacitance–voltage measurements of Co/aniline blue/ n-Si sandwich-type rectifying device was investigated.Furthermore, the effects of the illumination on the current–voltage measurements were tested with 100 mW/cm2 light intensity, and it was seen that Co/aniline blue/ n-Si sandwich-type device showed a clear response to illumination, and it may be a candidate for solar cells or photodiode applications. The rectifying device parameters, such as the barrier height (Ф), the ideality factor ( n), the rectification ratio, and the series resistance ( Rs), were obtained as a function of temperature using thermionic emission, Cheung function, and Norde function. The interface state densities versus energy were obtained. The Richardson constant ( A*) obtained from the In( Io/ T2) versus 1000/ T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height[Formula: see text] and the standard deviation ( σo) were calculated using the apparent Schottky barrier height Фap versus 1/2 kT plot. So, it has been found to be 1.08 eV and 0.15 V (260–460 K) and 0.79 eV and 0.10 V (100–260 K), respectively. The results were discussed based on the presence of two Gaussian distributions of Фb potential in the contact area of Co/aniline blue/ n-Si/Al device.

show abstract

Section: Introductionmentioning

confidence: 99%

Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications

Kaçuş

Şahin

Aydoğan

et al. 2020

Jnl of Sandwich Structures & Materials

View full text Add to dashboard Cite

show abstract

“…Defect-free contacts can reduce leakage currents, stabilize heating treatment, and produce accurate surface states, which stabilize the Schottky barrier height of the interface [8][9][10]. The interface between the metal contact and multilayer semiconductor systems, such as laser diodes, field-effect transistors, and gas sensors, cannot be metallized because annealing would damage the fine structures in the interfaces of multilayer semiconductor systems [11][12][13]. Therefore, the formation of coherent constraint between a metallic contact and the semiconductor surface is important for applications in advanced nanodevices.…”

Section: Introductionmentioning

confidence: 99%

Thermal effect of Zn quantum dots grown on Si(111): competition between relaxation and reconstraint

et al. 2017

View full text Add to dashboard Cite

Zn dots are potential solutions for metal contacts in future nanodevices. The metastable states that exist at the interface between Zn quantum dots and oxide-free Si(111) surfaces can suppress the development of the complete relaxation and increase the size of Zn dots. In this work, the actual heat consumption of the structural evolution of Zn dots resulting from extrinsic thermal effect was analyzed. Zn dots were coherently grown on oxide-free Si(111) through magnetron RF sputtering. A compensative optical method combined with reflective second harmonic generation and synchrotron x-ray diffraction (XRD) was developed to statistically analyze the thermal effect on the Zn dot system. Pattern matching (3 m) between the Zn and oxide-free Si(111) surface enabled Si(111) to constrain Zn dots from a liquid to solid phase. Annealing under vacuum induced smaller, loose Zn dots to be reconstrained by Si(111). When the size of the Zn dots was in the margin of complete relaxation, the Zn dot was partially constrained by potential barriers (metastable states) between Zn(111) and one of the six in-planes of Si〈110〉. The thermal disturbance exerted by annealing would enable partially constrained ZnO/Zn dots to overcome the potential barrier and be completely relaxed, which is obvious on the transition between Zn(111) and Zn(002) peak in synchrotron XRD. Considering the actual irradiated surface area of dots array in a wide-size distribution, the competition between reconstrained and relaxed Zn dots on Si(111) during annealing was statistically analyzed.

show abstract

Heterojunction diode application of yttrium ıron oxide (Y3Fe5O12)

Deniz

Çaldıran

2022

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Temperature Dependence of Current-Voltage Characteristics of Al/Rubrene/n-GaAs (100) Schottky Barrier Diodes

Cited by 11 publications

References 27 publications

Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications

Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications

Thermal effect of Zn quantum dots grown on Si(111): competition between relaxation and reconstraint

Heterojunction diode application of yttrium ıron oxide (Y3Fe5O12)

Contact Info

Product

Resources

About