Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Qi, Jinwei; Yang, Xu; Li, Xin; Tian, Kai; Mao, Zhangsong; Yang, Song; Song, Wenlei

doi:10.1109/tpel.2018.2884966

Cited by 61 publications

(16 citation statements)

References 40 publications

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“…The SiC power devices are regarded as an ideal candidate to increase power density and efficiency in high power conversion systems [7]- [9]. However, higher dv/dt and di/dt of SiC power devices will introduce more serious avalanche failure issues.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

Yang

et al. 2021

IEEE Trans. Power Electron.

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The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe operation of the power conversion systems, particularly under the extreme temperature conditions. In this paper, the avalanche capability of SiC planar/trench MOSFETs is systematically evaluated and analyzed over the temperature range of 90 to 340 K. Importantly, the essential mechanisms and temperature dependence of avalanche failure under cryogenic conditions are further explored by combining many analysis methods such as TCAD simulations, the unclamped inductive switching characterizations, and the transient junction temperature prediction. The highest avalanche energy density of 171.24 mJ/mm 2 at 90K indicates the great application potential of SiC planner MOSFET in cryogenic electronics. Moreover, the safe avalanche operation boundary (AOB) model is established over the cryogenic temperature range. The relevant analysis method and AOB model can be used to accurately evaluate and quantitatively predict the avalanche capability of SiC planar/trench MOSFETs for the cryogenic converter design.

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Section: Introductionmentioning

confidence: 99%

Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

Yang

et al. 2021

IEEE Trans. Power Electron.

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“…[1,2]. The research in this area can be classified into the following three groups: 1) cryogenic characterizations of semiconductors [3]- [10]; 2) cryogenic characterizations of passive components [11]- [13]; 3) cryogenic design and evaluation of power converters [14]- [18]. In this article, the focus is on the characterizations of semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Cryogenic Performances Comparisons Among Si MOSFET, SiC MOSFET, Cascode GaN, and GaN Devices

Wei

Hossain

Mantooth

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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Cryogenic power electronics is an emerging technology to achieve high efficiency and high power density. As the key element of the power electronics system, the device performance should be evaluated under cryogenic temperatures. To demonstrate the differences between different materials and technologies, cryogenic temperature performance comparisons among silicon (Si) metal–oxide–semiconductor field-effect transistor (MOSFET), Si insulated-gate bipolar transistor (IGBT), silicon carbide (SiC) MOSFET, Cascode gallium nitride (GaN), and GaN high-electron-mobility transistor (HEMT) from different perspectives are made, which includes on-state resistance, threshold voltage, turn-on and turn-off times, turn-on and turn-off switching losses. The normalized values are adopted and results are drawn in the same pictures to demonstrate the differences. The results demonstrate that traditional Si devices have better performances under low temperatures. The SiC MOSFET is not suitable for cryogenic applications due to its increased on-state resistance and switching loss. Cascode GaN and GaN HEMT are promising candidates for cryogenic applications with reduced conduction loss and switching loss.

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“…Power semiconductors/modules inside inverters are the most crucial devices controlling the power conversion efficiency. In response to the urgent need for high-performance power conversion applications, the power semiconductor industry has recently seen rapid technological developments, such as insulated-gate bipolar transistors (IGBTs) [ 1 , 2 ], metal-oxide semiconductor field effect transistors (MOSFETs) [ 3 , 4 ], and even wide bandgap (WBG) silicon carbide (SiC) [ 5 , 6 ] and gallium nitride (GaN) power devices [ 7 ]. In contrast to IGBTs, MOSFETs comprise a number of advantageous features, such as a higher switching frequency and lower switching loss; accordingly, they have been used in a wide range of industrial applications, such as converters and inverters.…”

Section: Introductionmentioning

confidence: 99%

“…They found that parasitic parameters have a considerable influence on the switching loss because of their effect on the switching waveform and speed. In addition to the parasitic effect, temperature also plays an important role in the switching and conduction losses of power devices (see, e.g., [ 1 , 14 ]). The device junction temperature during load cycles greatly influences the switching transients and power losses of power devices, which are, in turn, highly dependent on their device junction temperatures and parasitics.…”

Section: Introductionmentioning

confidence: 99%

Transient Electro-Thermal Coupled Modeling of Three-Phase Power MOSFET Inverter during Load Cycles

2021

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This study introduces an effective and efficient dynamic electro-thermal coupling analysis (ETCA) approach to explore the electro-thermal behavior of a three-phase power metal–oxide–semiconductor field-effect transistor (MOSFET) inverter for brushless direct current motor drive under natural and forced convection during a six-step operation. This coupling analysis integrates three-dimensional electromagnetic simulation for parasitic parameter extraction, simplified equivalent circuit simulation for power loss calculation, and a compact Foster thermal network model for junction temperature prediction, constructed through parametric transient computational fluid dynamics (CFD) thermal analysis. In the proposed ETCA approach, the interactions between the junction temperature and the power losses (conduction and switching losses) and between the parasitics and the switching transients and power losses are all accounted for. The proposed Foster thermal network model and ETCA approach are validated with the CFD thermal analysis and the standard ETCA approach, respectively. The analysis results demonstrate how the proposed models can be used as an effective and efficient means of analysis to characterize the system-level electro-thermal performance of a three-phase bridge inverter.

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Temperature Dependence of Dynamic Performance Characterization of 1.2-kV SiC Power mosfets Compared With Si IGBTs for Wide Temperature Applications

Cited by 61 publications

References 40 publications

Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

Cryogenic Performances Comparisons Among Si MOSFET, SiC MOSFET, Cascode GaN, and GaN Devices

Transient Electro-Thermal Coupled Modeling of Three-Phase Power MOSFET Inverter during Load Cycles

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