Temperature Dependence of Electrical Resistivity of the Al4SiC4 Sintered Bodies Prepared by Pulse Electronic Current Sintering

Abstract

Temperature dependence of the electrical resistivity of the Al 4 SiC 4 sintered bodies in the range of 100 1000 C was studied in this paper. Currentvoltage characteristics of the bodies showed a linear relationship, and the characteristics have an ohmic region. Electrical resistivity, obtained from the currentvoltage characteristics, exhibited insulation properties, and decreased with the porosity of the bodies. Further, the electrical resistivity varied signicantly with temperature. However, any dierence in activation energy for electrical resistivity among samples was rarely found despite the dierent porosity of them. Consequently, the porosity of the bodies did not aect the temperature dependence of electrical resistivity.

A theoretical study of dielectric tensor, Born effective charges, LO-TO splitting and infrared response of Al4SiC4 and Al4Si2C5

“…Both of them have hexagonal structures (P6 3 mc for Al 4 SiC 4 , 3 R m for Al 4 Si 2 C 5 ), and the crystallographic parameters were provided in detail by Inoue et al [6]. The temperature dependence of thermal conductivity and electrical resistivity of bulk Al 4 SiC 4 material were studied by Inoue et al [7,8] in 2003; and the impact of oxidation on the electrical resistance was also tested by them [9]. The electronic structures and spectral properties of Al 4 SiC 4 and Al 4 Si 2 C 5 have been reported by Hussain et al [10].…”

“…can use Eq (7). to evaluate all diagonal tensor components by applying the external electric field in one of the three principal crystallographic directions at each time.Using Eq.…”

Al4SiC4 wurtzite crystal: Structural, optoelectronic, elastic, and piezoelectric properties

“…[1][2][3] Its high temperature behavior was investigated a few years ago through thermal conductivity 4 and electrical resistivity 5,6 measurements. The impact of oxidation on the electrical resistance was also studied.…”

A ternary compound additive for vacuum densification of β-silicon carbide at low temperature

“…The decomposition behavior of Al 4 SiC 4 at low temperature in a vacuum condition has never been reported. Inoue et al 13,14 prepared sintered Al 4 SiC 4 and composites consisting of SiC and Al 4 SiC 4 at 1700 • C in a vacuum using a spark plasma sintering method, but they did not report any decomposition behavior of Al 4 SiC 4 up to 1700 • C. Unlike our experiment, they applied the relatively high pressure of 80 MPa to the densification of the mixture during heat-treatment. It is well known that the pressure during heat-treatment significantly inhibits the decomposition of Al 4 SiC 4 by restraining the partial pressure of vapour species because the decomposition temperature of aluminumbased compounds was reported to depend on the partial pressure of aluminum vapour.…”