Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs

Abstract

Abstract-The temperature dependence of strainenhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schrödinger-Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.