Temperature Dependence of Electron Transport in CdSe Quantum Dot Films

Loef, Ruben; Houtepen, Arjan J.; Talgorn, Elise; Schoonman, J.; Goossens, Albert

doi:10.1021/jp9017713

Cited by 9 publications

(9 citation statements)

References 25 publications

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“…This phenomenon has also been reported in other QD electronic devices. 39,40 Below 220 K, the mobility decreases as temperature drops, manifesting a thermally activated charge hopping process with an activation energy E a of 25.6 meV. We also note that n-type behavior starts to appear at low temperatures.…”

Section: Resultsmentioning

confidence: 64%

“…Rather, it is likely associated with the thermal contraction or phase transition of the ligands, which may reduce the tunneling barrier between QDs. This phenomenon has also been reported in other QD electronic devices. , Below 220 K, the mobility decreases as temperature drops, manifesting a thermally activated charge hopping process with an activation energy E a of 25.6 meV. We also note that n-type behavior starts to appear at low temperatures.…”

Section: Resultsmentioning

confidence: 99%

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Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm

et al. 2017

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Near-to-mid-infrared photodetection technologies could be widely deployed to advance the infrastructures of surveillance, environmental monitoring, and manufacturing, if the detection devices are low-cost, in compact format, and with high performance. For such application requirements, colloidal quantum dot (QD) based photodetectors stand out as particularly promising due to the solution processability and ease of integration with silicon technologies; unfortunately, the detectivity of the QD photodetectors toward longer wavelengths has so far been low. Here we overcome this performance bottleneck through synergistic efforts between synthetic chemistry and device engineering. First, we developed a fully automated aprotic solvent, gas-injection synthesis method that allows scalable fabrication of large sized HgTe QDs with high quality, exhibiting a record high photoluminescence quantum yield of 17% at the photoluminescence peak close to 2.1 μm. Second, through gating a phototransistor structure we demonstrate room-temperature device response to reach >2 × 10 cm Hz W (at 2 kHz modulation frequency) specific detectivity beyond the 2 μm wavelength range, which is comparable to commercial epitaxial-grown photodetectors. To demonstrate the practical application of the QD phototransistor, we incorporated the device in a carbon monoxide gas sensing system and demonstrated reliable measurement of gas concentration. This work represents an important step forward in commercializing QD-based infrared detection technologies.

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Section: Resultsmentioning

confidence: 64%

Section: Resultsmentioning

confidence: 99%

Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm

et al. 2017

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“…Previous capacitance based DLTS measurements on NC-diodes were therefore not conclusive. 74 An alternative DLTS method for high-trap density lowmobility semiconductors is given by Q-DLTS, which is based on the measurement of current transients. The current transient resulting from the carrier emission of a single discrete trap is given by:…”

Section: Trap State Characterizationmentioning

confidence: 99%

Electrical characterization of nanocrystal solids

Bozyigit

Wood

2014

J. Mater. Chem. C

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“…15 This may be the reason why earlier attempts at DLTS on CdSe NCs on a TiO 2 electrode did not yield conclusive results. 16 We instead utilize a current-based DLTS method 17 (often referred to as Q-DLTS), which employs the measurement of current transients and was particularly successful for organic materials. 18,19 As an initial system to study, we select a solid of PbS NCs with an ethanedithiol (EDT) surface treatment since it is commonly used as the active material in a variety of NC solar cells, and the performance limitations are believed to be linked to the presence of trap states.…”

Section: ■ Introductionmentioning

confidence: 99%

Deep Level Transient Spectroscopy (DLTS) on Colloidal-Synthesized Nanocrystal Solids

Bozyigit¹,

Jakob²,

Yarema³

et al. 2013

ACS Appl. Mater. Interfaces

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We demonstrate current-based, deep level transient spectroscopy (DLTS) on semiconductor nanocrystal solids to obtain quantitative information on deep-lying trap states, which play an important role in the electronic transport properties of these novel solids and impact optoelectronic device performance. Here, we apply this purely electrical measurement to an ethanedithiol-treated, PbS nanocrystal solid and find a deep trap with an activation energy of 0.40 eV and a density of NT = 1.7 × 10(17) cm(-3). We use these findings to draw and interpret band structure models to gain insight into charge transport in PbS nanocrystal solids and the operation of PbS nanocrystal-based solar cells.

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Temperature Dependence of Electron Transport in CdSe Quantum Dot Films

Cited by 9 publications

References 25 publications

Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm

Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm

Electrical characterization of nanocrystal solids

Deep Level Transient Spectroscopy (DLTS) on Colloidal-Synthesized Nanocrystal Solids

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