Temperature dependence of exciton peak energies in CuI quantum dots

Gogolin, O.; Mshvelidze, G. G.; Tsitsishvili, E.; Schmidt, M.; Hepting, A.; Klingshirn, C.

doi:10.1016/s0038-1098(02)00103-5

Cited by 12 publications

(6 citation statements)

References 10 publications

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“…(12) are rather cumbersome and time-consuming as long as we use for the shape functions η ν (ξ) the exact integral representation (A1) (cf. [26,30]). For practical applications it is as a rule necessary and useful to approximate the original η ν (ξ) functions (A1) by adequate analytical expressions.…”

Section: Power Function Modelmentioning

confidence: 99%

“…Examples of successful least-mean-square fittings involving such numerical integration procedures have been presented in Refs. [26] and [30] for exciton peak energy shifts in a CdTe/ZnTe multiple quantum well structure and a CuI quantum dot system, respectively. However, the corresponding numerical analysis procedures are computationally relatively expensive and can thus hardly be considered as being ready for current analyses of E(T) data sets within the frame of experimental studies.…”

Section: Introductionmentioning

confidence: 99%

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Semi‐empirical descriptions of temperature dependences of band gaps in semiconductors

Pässler¹

2003

Physica Status Solidi (b)

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Starting from general foundations of the semi-empirical theory of monotonic temperature dependences of band gaps in semiconductors, we devote ourselves in this article to further analytical development and applications of the power function model. On the basis of a detailed analytical study of asymptotic low and high temperature behaviors, including numerical comparisons for intermediate temperatures, we devise a novel analytical (higher order root) expression. Applications to least-mean-square fittings of fundamental band gap data available for a variety of group IV, III-V, and II-VI materials are shown to provide, both for regimes of moderate and large phonon dispersion, self-consistent values for basic dispersion-related parameters. This is essential for detailed comparisons of the power function model with other elaborate semi-empirical models developed in last years, which differ above all by qualitatively different types of low temperature asymptotes. An exemplification for bulk samples of Si and GaAs shows that it is rather difficult to distinguish clearly between, that are controlled by system-specific fractional exponents (2 < p < 3) and other dispersion-related descriptions that admit exclusively quadratic asymptotes (p = 2). Novel high-precision data for single quantum dot luminescence peak positions are found to give us better chances for distinguishing between qualitatively different types of low temperature asymptotes.

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Section: Power Function Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Semi‐empirical descriptions of temperature dependences of band gaps in semiconductors

Pässler¹

2003

Physica Status Solidi (b)

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“…For example, the temperature and size dependences of the exciton peak energies in CuI and AgI semiconductor nanocrystals (NCs) have been measured using the absorption and emission spectra [1][2][3][4], and radiative recombination processes in silver halides single crystals have been probed using the optically detected magnetic resonance (ODMR) technique [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Room temperature luminescence in CuI/AgI quantum dots

Wei

Chen

Hwang

et al. 2008

Journal of Luminescence

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“…Recently, I-VII γ -cuprous halides semiconductors 20 such as CuCl, CuBr, and CuI have drawn attention 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 because these are zincblende direct band-gap semiconductors (3.3 eV for CuCl, 2.91 eV for CuBr and 2.95 eV for CuI) and have large exciton binding energies (190 meV for CuCl, 108 meV for CuBr and 58 meV for CuI) with their lattice constants closely matched to that of Si as can be seen by the table 1 . From this table, one can see that the lattice constant of Si, 0.543 nm, is very closely matched to that of CuCl, 0.542 nm.…”

mentioning

confidence: 99%

“…Researches on the cuprous halides semiconductors have been focused on the following areas over the past decade: (1) spectroscopic and theoretical studies of band structures 26 27 28 29 30 31 32 33 , (2) photoluminescence studies of I-VII quantum dots embedded in NaCl crystals and glasses 22 24 25 33 , (3) surface studies of the growth mechanisms involved in the hetero epitaxy, and single crystal and poly crystal layer growth on Si and GaAs 23 35 36 37 38 39 40 . Especially, Nishida et al 23 demonstrated single crystal thin layera growth on GaAs and Si using ultra high vacuum (UHV) molecular beam epitaxy (MBE).…”

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confidence: 99%

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

Ahn

Park

2016

Sci Rep

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In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology.

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Temperature dependence of exciton peak energies in CuI quantum dots

Cited by 12 publications

References 10 publications

Semi‐empirical descriptions of temperature dependences of band gaps in semiconductors

Semi‐empirical descriptions of temperature dependences of band gaps in semiconductors

Room temperature luminescence in CuI/AgI quantum dots

Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

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