Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC

Treu, Michael; Rupp, Roland; Kapels, H.; Bartsch, W.

doi:10.4028/www.scientific.net/msf.353-356.679

Cited by 53 publications

(39 citation statements)

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“…5a). This observation was reported in several works in the literature [12,26,40,41]. Because the calculated reverse characteristics are not in good agreement with the experimental reverse characteristics at the lower temperatures in the case of no bias dependence of barrier height (second model), we can conclude that the bias dependence of barrier height model seems more appropriate than the second model for analysis the reverse characteristics I-V of β-Ga 2 O 3 SBDs.…”

Section: Resultsmentioning

confidence: 47%

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Latreche

2019

SN Appl. Sci.

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A new analysis method of reverse leakage current for β-Ga 2 O 3 Schottky barrier diodes is performed by using two models: bias dependence and no bias dependence of barrier height. The method incorporates both the current induced by the tunneling of carriers through the Schottky barrier and the current induced by the thermionic emission of carriers across the metal-semiconductor interface. The experimental reverse transition voltage between thermionic emission and tunneling process can be determined from the intersection of the two components that were separated from the total current. Below the reverse transition voltage, the thermionic emission current dominates, and above it, the tunneling current dominates, while near the reverse transition voltage, neither tunneling nor thermionic emission accurately describes the conduction process because the both currents have the same order of magnitude; therefore, the both mechanisms must be combined together. The experimental reverse transition voltage (bias-dependent model) increases for low and high temperatures and decreases at intermediate temperatures for β-Ga 2 O 3 Schottky barrier diodes. The bias dependence of the barrier height model shows that the barrier height is strongly dependent (increases) on the reverse bias, in particular at low temperatures and low reverse bias. This model can explain the discrepancy between the experimental characteristics and those calculated by no bias dependence of barrier height model.

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Section: Resultsmentioning

confidence: 47%

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Latreche

2019

SN Appl. Sci.

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“…Combined and not combined with barrier lowering model, some authors [6][7][8][9][10][11] described the reverse leakage current using the general model [12] of the tunneling current. At the same time, the others [13][14][15][16][17][18] used the thermionic field emission (TFE) developed by Padovani-Stratton [19] also with and without the effect of the image force barrier lowering. However, some researchers [20][21][22] used thermionic emission model in combination with the barrier lowering one to describe the experimental reverse characteristics data.…”

Section: Introductionmentioning

confidence: 99%

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes

Latreche¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

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A new method to analyze reverse characteristics of 4H-SiC Schottky barrier diode has been presented in this paper. The model incorporates both the current induced by the tunneling of carriers through the Schottky barrier and that induced by the thermionic emission of carriers across the metal-semiconductor interface. The treatment includes the effect of image force lowering both the thermionic emission and electron tunneling processes. This analysis allowed us to separate and identify the thermionic emission and tunneling components of the total current. The experimental reverse transition voltage between thermionic emission and tunneling process can be determined from the intersection of the two components by using two models; bias dependence and no bias dependence of barrier height. For high temperatures, the experimental reverse transition voltage increases with increasing the temperature and decreases with increasing the doping concentration as predicted by Latreche's model.

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“…Above 150°C, the overall leakage current is exponentially dependent on temperature, showing that the leakage current is dominated by thermionic current, a phenomena already noted in Ref. 11. This is an effect to take into account for high-temperature applications.…”

Section: Static Characteristics Up To 300°cmentioning

confidence: 82%

“…8 We also reported 9 that the titanium (Ti) and nickel (Ni) metal layers typically used for commercial SiC Schottky diodes 10,11 were not suitable for high-temperature operation; Ni diodes showed forward voltage drift and double barrier effect, and Ti diodes showed high reverse leakage currents.…”

Section: Introductionmentioning

confidence: 96%

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Berthou

Godignon

Montserrat

et al. 2011

Journal of Elec Materi

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Tungsten is a suitable metal contact for high-temperature applications. We fabricated 1.7-kV and 6-kV 4H-SiC junction barrier Schottky (JBS) diodes with a tungsten Schottky contact with different geometries, and their forward characteristics were measured up to 300°C. The 1.7-kV diodes exhibited unipolar conduction up to 6 V at 275°C, whereas 6-kV diodes showed ideal on-resistance, R on . An optimized JBS design permits a higher breakdown voltage to be obtained than for the pure Schottky diode, with a reasonable increase (10%) of the on-resistance. Results demonstrate the feasibility of tungsten JBS diodes for fast-switching, high-voltage, and high-temperature applications.

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Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC

Cited by 53 publications

References 0 publications

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

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