2011
DOI: 10.1016/j.nimb.2010.12.024
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Temperature dependence of lattice disorder in Ar-irradiated (100), (110) and (111) MgO single crystals

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Cited by 10 publications
(6 citation statements)
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References 20 publications
(31 reference statements)
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“…This latter finding is consistent with the fact that MgAl 2 O 4 is an elastically anisotropic material, 24 with the [110] direction softer than the [111] one. Such a crystallographic irradiation-dependent response was reported previously for yttria-stabilized c-ZrO 2 , MgO 25,26 and Al 2 O 3 . 27 Earlier studies demonstrated that the damage accumulation in irradiated spinels occurs in two steps.…”
Section: Resultssupporting
confidence: 83%
“…This latter finding is consistent with the fact that MgAl 2 O 4 is an elastically anisotropic material, 24 with the [110] direction softer than the [111] one. Such a crystallographic irradiation-dependent response was reported previously for yttria-stabilized c-ZrO 2 , MgO 25,26 and Al 2 O 3 . 27 Earlier studies demonstrated that the damage accumulation in irradiated spinels occurs in two steps.…”
Section: Resultssupporting
confidence: 83%
“…Surprisingly, Figures 3 and 4 show that in this material S n and S e irradiation leads to much lower f D (0.67 at maximum) than that obtained for S n þ S e (f D ¼ 1) or even for the S n irradiation alone (f D ¼ 1). A rather similar result is obtained for MgO where S n and S e single irradiations give values of f D close to those expected from previous studies [27][28][29][30][31] and where S n and S e irradiation leads to much lower f D (0.30 at maximum) than that obtained for S n þ S e (f D ¼ 0.71). Thus, in these two systems, clear cooperative S n /S e effects are exhibited that induce a healing of the irradiation-induced damage.…”
supporting
confidence: 90%
“…Previous works and more recent studies performed by some of the authors (unpublished) demonstrate that both S n (Refs. [27][28][29][30][31] and S e induce damage in this material, in a very similar way as that observed for c-ZrO 2 . Thus, it would have been reasonable to obtain similar additive S n and S e contributions during dual-beam irradiation.…”
supporting
confidence: 81%
“…This was because the migration barrier of the interstitial atoms in the MgO was much lower than that in the ZrO 2 , which resulted in the diffusion of the interstitial atoms in the MgO to a deeper position, thereby also leading to a wide distribution of residual vacancies [24]. In addition, vacancies in the MgO were immobile at this current irradiation temperature (773 K), and they begin to mobilize only when the temperature was higher than 873 K [19]. Thus, at the low fluence, it is possible that the implanted He atoms were trapped by these isolated vacancies with wide distribution and stabilized the vacancies formed there, which further reduced the accumulation of He bubbles [25].…”
Section: Resultsmentioning
confidence: 99%
“…The ion flux was controlled at about 1.8 × 10 13 ions/cm 2 s. The He + ion irradiation experiments were performed using the 200 keV ion implanter (LC22-100-01, Beijing Zhongkexin Electronics Equipment Co., Ltd, Beijing, China) at the Center for Ion Beam Application, Wuhan University. The displacement per atom (dpa) and He concentration of the samples irradiated to a fluence of 1 × 10 16 ions/cm 2 were calculated by SRIM-2013 with a “Quick Kinchin-Pease” mode [16], where the threshold displacement energies (E d ) of Zr, Mg, and O atoms were all set to 40 eV, and the theoretical density values of ZrO 2 –MgO, YSZ, and MgO (4.63, 6.10, and 3.58 g/cm 3 ) were used, respectively [17,18,19]. The calculation results of the ZrO 2 –MgO composite are shown in Figure 1a.…”
Section: Methodsmentioning
confidence: 99%