Temperature dependence of magnetization in ultrathin MnTe films

Świrkowicz, R.

doi:10.1088/0953-8984/12/13/303

Cited by 5 publications

(4 citation statements)

References 26 publications

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“…A strong decrease of the anisotropy constant D s at the surface leads to a decrease of the surface magnetization, but the subsurface moment is still lower. A similar result was obtained by Diep [5] for an AFM thin film and by Swirkowicz [3] for ultrathin MnTe films. At higher temperatures the crossover behaviour disappears.…”

Section: Numerical Resultssupporting

confidence: 86%

“…The magnetic properties of thin fcc (111) and fcc (100) ferromagnetic and antiferromagnetic (AFM) itinerant-electron films were studied within the single-band Hubbard model by Wu and Nolting [2]. The spin waves and the temperature dependence of local magnetization were investigated by Swirkowicz [3] in ultrathin MnTe (100) films with antiferromagnetic ordering. The calculations were performed within the framework of the Heisenberg model with use of the Green's function formalism.…”

Section: Introductionmentioning

confidence: 99%

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Magnetic Properties of Antiferromagnetic Semiconducting Thin Films

Wesselinowa

2002

phys. stat. sol. (b)

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A Green's function technique is used to calculate the properties of antiferromagnetic thin films. The layer magnetizations and the parallel layer susceptibilities at low temperatures are discussed. The second-layer magnetization and second-layer parallel susceptibility are smaller than the surface ones. This anomaly has no counterpart in ferromagnetic thin films and is interpreted as an effect of the inhomogeneous thermal fluctuations, enhanced by quantum fluctuations.

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Section: Numerical Resultssupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Magnetic Properties of Antiferromagnetic Semiconducting Thin Films

Wesselinowa

2002

phys. stat. sol. (b)

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“…The value of H MD for the thick sample ("pillar") is close to the value of anisotropy field 3.25 T (see Ref. 45) and diminishes down to 0.8 T for 'thin film".…”

Section: Switching Of Polarization By External Magnetic/electric Fieldsupporting

confidence: 73%

Magnetostriction-driven multiferroicity of MnTe and MnTe/ZnTe epitaxial films

Gomonay,

Korniienko

2008

Preprint

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Here we demonstrate that MnTe epitaxial films with zinc-blend structure and MnTe/ZnTe multilayers should show ferroelectric polarization in antiferromagnetically (AFM) ordered state and thus belong to multiferroics. Spontaneous ferroelectric polarization results from the bending of highly ionic Mn-Te-Mn bonds induced by magnetostrictive shear strain. Orientation of ferroelectric polarization is coupled with orientation of AFM vector and thus can be controlled by application of the external magnetic field. Due to the clamping of electric and magnetic order parameters, domain structure in MnTe is governed by two mechanisms: depolarizing field produced by electric dipoles and destressing field produced by magnetoelastic dipoles. The values of monodomainization electric and magnetic fields depend upon the sample shape and diminish with the film thickness. Magnetoelectric nature of the domains make it possible to visualize the domain structure by linear and nonlinear optical methods (Kerr effect, second harmonic generation technique).

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“…Moreover, the course of the mean magnetic moment is similiar to the behaviour of surface magnetization rather than the central layer one (figure 9). In the case of MnTe(100) films with antiferromagnetic ordering of the type III the magnetization curve of relatively thin film mimics the temperature dependence of the magnetic moment in the bulk system [18]. It may well be that this is a characteristic feature of magnetic semiconductors.…”

Section: Thickness Dependence Of Magnetization Curvesmentioning

confidence: 96%

Spin waves and temperature dependence of magnetization in strained EuS films

Świrkowicz

Story

2000

J. Phys.: Condens. Matter

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Magnetic properties of ultrathin EuS films with strain effects taken into account are studied within the framework of the Green function formalism. Standard RPA and more general procedures employed by Callen are used for decoupling of higher order functions generated by exchange and anisotropy terms, respectively. Parameters of the model such as exchange integrals in strained structures and anisotropy constants are estimated on the basis of experimental data obtained with use of SQUID and FMR techniques. Strong influence of stress on spin-wave dispersion relations, especially on high-energy modes, is found. A shift of curves representing magnon DOS towards higher energies is obtained in the presence of stress. All these modifications lead to a slower decrease of the magnetization with increasing temperature and to an enhancement of the critical temperature. The results are consistent with experimental data. Investigations of the course of the magnetization curves for various film thickness also confirm experimental results.

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Temperature dependence of magnetization in ultrathin MnTe films

Cited by 5 publications

References 26 publications

Magnetic Properties of Antiferromagnetic Semiconducting Thin Films

Magnetic Properties of Antiferromagnetic Semiconducting Thin Films

Magnetostriction-driven multiferroicity of MnTe and MnTe/ZnTe epitaxial films

Spin waves and temperature dependence of magnetization in strained EuS films

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