Temperature dependence of On-state characteristics, and Switching characteristics of 5 kV class 4H-SiC SEJFET

Abstract

A normally-off type 5 kV class 4H-SiC JFET with low specific on-resistance, called SEJFET (Static Expansion channel JFET), has been fabricated. Its normally-off operation is realized at the temperature from RT to 600 K. A very fast switching time of the 4H-SiC SEJFET are realized. The turn-on time at RT is 20ns and the turn-off time at RT is 47ns. In this SEJFET, temperature dependences of the output characteristics and transfer characteristics are evaluated. Its specific on-resistance has a large positive temperature dependence, and its transconductance has a large negative temperature dependence. SiCJFET SEJFET

Interfacial Reaction between Zn-Al-Based High-Temperature Solders and Ni Substrate

“…On the contrary, there has been no report on the interfacial reaction between a Ni substrate and Zn-Al solder, where the formation and growth of some IMCs such as d (-: CoZn 13 ), c (Ni 3 Zn 14 , D8 2 : Cu 5 Zn 8 ), and b 1 (NiZn_LT, L1 0 : AuCu) from the phase diagram of the Zn-Ni system shown in Fig. 1a, 7 while the five compounds Al 3 Ni (D0 11 : Fe 3 C), Al 3 Ni 2 (D5 13 : Al 3 Ni 2 ), AlNi (B2:ordered bcc), Al 3 Ni 5 (-: Ga 3 Pt 5 ), and AlNi 3 (L1 2 : AuCu 3 ) appear in the Al-Ni binary system as shown in Fig. 1b.…”

“…Such thermal tests reproduce the practical environment in the inverter system constructed from the several power semiconductor devices used in hybrid vehicles. [9][10][11] Conventional Si semiconductor devices have an operating temperature limitation of 150°C, making it impossible to miniaturize such power controllers. Semiconductor devices employing compounds such as GaN and SiC are applicable for high-temperature operation beyond 200°C.…”

“…Semiconductor devices employing compounds such as GaN and SiC are applicable for high-temperature operation beyond 200°C. 10,11 It is expected, however, that the thermal stress loaded on power devices increases when they are utilized under a wider temperature range between -40°C and 200°C, which corresponds to artificial winter to on-stream engine room-temperature conditions. Therefore, immediate development of reliable hightemperature solders without Pb as well as compound semiconductors is required.…”

Computational Modeling of Tensile Stress Effects on the Structure and Stability of Prototypical Covalent and Layered Materials

“…Since the nature of the crystalline bonding networks is the ultimate responsible for the response of the compounds to these external conditions, it is rewarding and necessary investigating how macroscopic properties correlate with the chemical interactions at an atomic level. Covalent and layered solids constitute two crystal families currently displaying interest in a variety of areas such as electronics and solar cell industries [1][2][3]. These compounds provide a good target to examine how changes in strong and weak interactions affect the observed elastic stability of materials.…”

Pb-free high temperature solders for power device packaging

“…Miniaturization of the inverter will be essential to increasing the market for these vehicles, but this is a difficult challenge due to the limitations imposed by the operating temperature of the Si semiconductor devices, as the devices generally have an upper operating limit of 150ºC. Next-generation power semiconductor devices based on GaN and SiC will be able to operate at high temperatures in excess of 200ºC [1] [2].…”