Temperature dependence of polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films

Zhu, Guang; Zeng, Zhongming; Zhang, Li; Xue, Yan

doi:10.1002/app.27527

Cited by 13 publications

(4 citation statements)

References 17 publications

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“…In addition, the value of

reduced by 14.3% (from 7.0 μC/cm 2 to 6.0 μC/cm 2 ) at 25 °C, while the value of

reduced by 24.6% (from 6.9 μC/cm 2 to 5.2 μC/cm 2 ) at 60 °C, indicating that an increase in temperature accelerated the degradation of the polarization properties. This can be associated with trapped charges, as trapped charges will increase with increasing testing temperatures [ 25 ], resulting in a decline of the temporal stability of the device.…”

Section: Resultsmentioning

confidence: 99%

The Influence Mechanism of Temperature and Storage Period on Polarization Properties of Poly (Vinylidene Fluoride–Trifluoroethylene) Ultrathin Films

Shi

Zhang

et al. 2021

Membranes

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The effect of testing temperature and storage period on the polarization fatigue properties of poly (vinylidene fluoride-trifluoroethylene) (P(VDF–TrFE)) ultrathin film devices were investigated. The experimental results show that, even after stored in air for 150 days, the relative remanent polarization (Pr/Pr(0)) of P(VDF–TrFE) of ultrathin films can keep at a relatively high level of 0.80 at 25 °C and 0.70 at 60 °C. To account for this result, a hydrogen fluoride (HF) formation inhibition mechanism was proposed, which correlated the testing temperature and the storage period with the microstructure of P(VDF–TrFE) molecular chain. Moreover, a theoretical model was constructed to describe the polarization fatigue evolution of P(VDF–TrFE) samples.

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“…In addition, the value of

reduced by 14.3% (from 7.0 μC/cm 2 to 6.0 μC/cm 2 ) at 25 °C, while the value of

Section: Resultsmentioning

confidence: 99%

The Influence Mechanism of Temperature and Storage Period on Polarization Properties of Poly (Vinylidene Fluoride–Trifluoroethylene) Ultrathin Films

Shi

Zhang

et al. 2021

Membranes

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“…From theoretical considerations we show that the polarization in this region is inherently instable. As such, the mechanism governing retention in our devices is fundamentally different from those in ferroelectric-only devices [14,15] and in semiconductor-ferroelectric-metal multilayers. [16,17] Mitigation of this fundamental problem is however possible.…”

Section: Introductionmentioning

confidence: 86%

Data retention in organic ferroelectric resistive switches

Khikhlovskyi

Breemen

Janssen

et al. 2016

Organic Electronics

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Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can strongly affect the 'apparent' retention time and a suitable protocol is identified. Second, it is shown by experimental and theoretical methods that partial depolarization of the ferroelectric is the major mechanism responsible for imperfect data retention. This depolarization occurs in close vicinity to the semiconductor-ferroelectric interface, is driven by energy minimization and is inherently present in this type of phase-separated polymer blends. Third, a direct relation between data retention and the charge injection barrier height of the resistive switch is demonstrated experimentally and numerically. Tuning the injection barrier height allows to improve retention by many orders of magnitude in time, albeit at the cost of a reduced on/off ratio. Corresponding Author

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“…3). 18 Deformations caused by these dislocations decrease with the distance from the plane of a ferroelectricsubstrate contact and thus create a gradient of deformation. The gradient, in its turn, induces linear polarization due to the flexoelectric effect, that can be generally interpreted as created by an effective internal field.…”

Section: Internal Bias Field In Materials With Substratementioning

confidence: 99%

Dislocation mechanism of ferroelectric fatigue during multiple switching

Сидоркин

2013

J. Adv. Dielect.

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The paper is concerned with the characteristic features of the dislocation mechanism related to fatigue in ferroelectrics in the process of their repeated switching. In a polarized crystal, dislocations possess a charge the sign of which depends on the orientation of the spontaneous polarization vector relative to the dislocation line. In the process of hysteresis switching, the average force from the applied field acting on a charged dislocation for one period of the hysteresis loop is not equal to zero. Such long-acting force leads to the accumulation of defects near the surface, which can fix a polarization and so partially remove it from the switching process. The proposed mechanism explains the key dependences of the critical number of switching cycles on the field amplitude, frequency and temperature of the sample.

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Temperature dependence of polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films

Cited by 13 publications

References 17 publications

The Influence Mechanism of Temperature and Storage Period on Polarization Properties of Poly (Vinylidene Fluoride–Trifluoroethylene) Ultrathin Films

The Influence Mechanism of Temperature and Storage Period on Polarization Properties of Poly (Vinylidene Fluoride–Trifluoroethylene) Ultrathin Films

Data retention in organic ferroelectric resistive switches

Dislocation mechanism of ferroelectric fatigue during multiple switching

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