Temperature dependence of quantized states in an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure

Abstract

Piezoreflectance (PzR) and contactless electroreflectance (CER) measurements of an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure as a function of temperature in the range of 20–300 K have been carried out. A careful analysis of the PzR and CER spectra has led to the identification of various excitonic transitions, mnH(L), between the mth conduction band state and the nth heavy (light)-hole band state. The parameters that describe the temperature dependence of EmnH(L) are evaluated. A detailed study of the temperature variation of excitonic transition energies indicates that the main influence of temperature on quantized transitions is through the temperature dependence of the band gap of the constituent material in the well. The temperature dependence of the linewidth of 11H exciton is evaluated and compared with that of the bulk material.

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

“…T is the temperature, and α and β are Varshni's coefficients. β can be approximated as by the Debye temperature of the material [36].  …”