Temperature dependence of silicon and silicon carbide power devices: An experimental analysis

Amairi, Mahbouba; Mtimet, Sameh; Salah, Tarek Ben; Morel, Hervé

doi:10.1109/melcon.2012.6196389

Cited by 4 publications

(4 citation statements)

References 8 publications

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“…Temperature is not represented in (17) because it has little effect on the capacitive turn-off charge [18] and on the related energy dissipation [8].…”

Section: Space Charge Modelmentioning

confidence: 99%

“…Thus, by integrating (16) from 0 to − V R , one can obtain a formula for the capacitive turn‐off charge Q c of the MPS diode, i.e. the charge evacuated during its switching off to a reverse voltage of V R :

Q_{normalc} ()(, V_{normalR}) = C_{j 0} \cdot V_{normalj}^{M_{normalj}} \cdot \frac{{()(, V_{normalj} - V_{normalR})}^{1 - M_{normalj}^{}}}{M_{normalj} - 1}

Temperature is not represented in (17) because it has little effect on the capacitive turn‐off charge [18] and on the related energy dissipation [8].…”

Section: Dynamic Behaviourmentioning

confidence: 99%

See 1 more Smart Citation

Improvement of an electro‐thermal model of SiC MPS diodes

Starzak¹,

Stefanskyi²,

Zubert³

et al. 2018

IET Power Electronics

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This study presents improvements introduced in a behavioural electro-thermal model of silicon carbide merged PIN-Schottky (SiC MPS) diodes, aimed at a better representation of device characteristics for a more accurate prediction of power dissipation. In the electrical domain, the junction capacitance model has been thoroughly validated with a new parameter extraction procedure, yielding realistic values of the turn-off charge as well as current and voltage waveforms for various operating conditions, which is crucial for dynamic loss evaluation. The validity of the thermal sub-model has been extended by reflecting the temperature dependence of thermal conductivity. As a result, temperature evolution on both the long and short time scales is properly computed, providing correct on-state voltage drop and on-state power loss results. Device behaviour with a heat sink attached is also correctly simulated.

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“…Temperature is not represented in (17) because it has little effect on the capacitive turn-off charge [18] and on the related energy dissipation [8].…”

Section: Space Charge Modelmentioning

confidence: 99%

Q_{normalc} ()(, V_{normalR}) = C_{j 0} \cdot V_{normalj}^{M_{normalj}} \cdot \frac{{()(, V_{normalj} - V_{normalR})}^{1 - M_{normalj}^{}}}{M_{normalj} - 1}

Temperature is not represented in (17) because it has little effect on the capacitive turn‐off charge [18] and on the related energy dissipation [8].…”

Section: Dynamic Behaviourmentioning

confidence: 99%

Improvement of an electro‐thermal model of SiC MPS diodes

Starzak¹,

Stefanskyi²,

Zubert³

et al. 2018

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…This is particularly important in reliability studies and when trying to predict the survival of these systems in space. Finally, much work had been done by the authors and others which include experimental and/or theoretical data on temperature and radiation effects in semiconductors [3][4][5][6][7][8]. So, the present paper is a trial to shed further light on such very interest and important field.…”

Section: Introductionmentioning

confidence: 99%

Modeling the Dependence of Power Diode on Temperature and Radiation

El‐Ghanam

El-Maksood

Soliman

2015

IJPEDS

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A theoretical study had been carried out on the effect of radiation on the electrical properties of silicon power diodes. Computer program "PDRAD2015" was developed to solve the diode equations and to introduce the operating conditions and radiation effects upon its parameters. Temperature increase interrupts the electrical properties of the diode in the direction of drop voltage decrease across the p-n junction. The model was analyzed under the influence of different radiation type (gammarays, neutrons, protons and electrons) with various dose levels and energies. The carrier's diffusion lengths were seriously affected leading to a large increase in the forward voltage. These effects were found to be function of radiation type, fluence and energy.

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“…Schottky diodes are unipolar devices based on the drift of majority carriers whereas PiN diodes are bipolar devices based on the diffusion of minority carriers. Hence, Schottky diodes are not affected by minority carrier charge storage in the drift layers or by recombination currents that contribute to reverse recovery charges [2].…”

Section: Introductionmentioning

confidence: 99%

Temperature and <i>dI<sub>DS</sub>/dt</i> Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

Jahdi

Alatise

Mawby

2014

MSF

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This paper presents the temperature and switching rate dependence of 1.2 kV/30 A SiC Schottky diode energy losses in clamped inductive switching circuits with 1.2 kV/30 A SiC MOSFETs as the switching transistors. The devices are tested under an ambient temperature range that spans from -75°C to 175°C and with switching rates that span from 10 to 100 A/μs. Due to the abruptness of the diode turn-OFF, low series resistance and the lack of reverse recovery, SiC SBDs are known to exhibit ringing or electromagnetic oscillations in the presence of parasitic inductances and high switching rates. The impact of these electromagnetic oscillations on the switching energy, the dependence of the switching energy on temperature and the switching rate (dIDS/dt) is the purpose of this paper’s investigation.

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Temperature dependence of silicon and silicon carbide power devices: An experimental analysis

Cited by 4 publications

References 8 publications

Improvement of an electro‐thermal model of SiC MPS diodes

Improvement of an electro‐thermal model of SiC MPS diodes

Modeling the Dependence of Power Diode on Temperature and Radiation

Temperature and <i>dI<sub>DS</sub>/dt</i> Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

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