Temperature dependence of silicon power MOSFETs switching parameters

Abstract

If you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation. AbstractPurpose -This paper presents measurements of device switching parameters performed on a commercial power MOSFET under high temperature conditions, along with the inverse and direct source-drain current. Design/methodology/approach -Device temperature was linearly increased from 20 to 3008C. Switching times were measured by monitoring the current waveforms when the device was turned off and on. The gate was biased by a 10 V square signal while a 50 V DC bias was applied between the drain and source. The inverse current was measured under Vg ¼ 0V: Findings -The device response to being turned off becomes faster at high temperatures. The inverse leakage current is insignificant under 3008C but it increases rapidly after this limit. The direct saturation current increases with temperature for the same gate tension. These phenomena were associated to the thermal activation of defects. Originality/value -This paper offers information about switching performance of low cost commercial MOS devices in high temperature conditions. This information is essential in the microelectronic industry of harsh environments.