Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis

Manganelli, C. L.; Virgilio, Michele; Skibitzki, Oliver; Salvalaglio, Marco; Spirito, Davide; Zaumseil, P.; Yamamoto, Yuji; Montanari, Michele; Klesse, Wolfgang M.; Capellini, Giovanni

doi:10.1002/jrs.5860

Cited by 21 publications

(19 citation statements)

References 49 publications

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“…By means of the approach of Van de Walle, [ 22 ] the offset for valence and conduction bands can be estimated as a function of strain. Considering the thermal strain

ε_{th} (T)

[ 20 ] (blue line of Figure 3d), the difference in energy between the direct gap for heavy hole (

E_{normalg} (HH)

) and light hole

(E_{normalg} (LH))

varies between 12 and 20 meV in the investigated temperature range (orange line of Figure 3d), in good agreement with the results in Montanari et al [ 23 ]…”

Section: Effect Of Strain Gradient On Pl Spectrasupporting

confidence: 88%

“…In Figure a we report the experimental spectra obtained at different temperatures and for different positions of the laser spot. In the area outside the pillar, only thermal strain, arising from the difference between the coefficients of thermal expansion of Si and Ge, [ 20 ] is playing a role. In the inner area of the pillar, the contribution of mechanical deformation is also effective.…”

Section: Effect Of Strain Gradient On Pl Spectramentioning

confidence: 99%

“…c) Experimental PL spectra at T = 113 K (blue dashed curve), fit obtained following the approach of Equation () (light blue dot‐dashed curve), single contribution of LH and HH bands to the fit (respectively pink and violet solid curves). d) Thermal strain [ 20 ] (blue dashed line, left axis) and the difference in energy between the direct gaps of HH and LH (red solid line, right axis) as a function of temperature.…”

Section: Effect Of Strain Gradient On Pl Spectramentioning

confidence: 99%

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Tensile Strained Germanium Microstructures: A Comprehensive Analysis of Thermo‐Opto‐Mechanical Properties

Manganelli

Virgilio

Montanari

et al. 2021

Physica Status Solidi (a)

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The influence of the thermomechanical effects on the optical properties of germanium microstructures is investigated. Finite element method (FEM) calculations allow a complete spatial assessment of mechanical deformations induced by a silicon nitride (SiN) stressor layer deposited on Ge micropillars. Simulated strain maps are confirmed by experimental maps obtained by Raman spectroscopy. The theoretical investigation on strain‐dependent band structure, including the presence of a strain gradient along the longitudinal direction, is exploited to fully capture photoluminescence spectroscopy experiments. Finally, the joint effect of temperature and strain on the fundamental bandgap is also quantified.

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“…By means of the approach of Van de Walle, [ 22 ] the offset for valence and conduction bands can be estimated as a function of strain. Considering the thermal strain

ε_{th} (T)

[ 20 ] (blue line of Figure 3d), the difference in energy between the direct gap for heavy hole (

E_{normalg} (HH)

) and light hole

(E_{normalg} (LH))

varies between 12 and 20 meV in the investigated temperature range (orange line of Figure 3d), in good agreement with the results in Montanari et al [ 23 ]…”

Section: Effect Of Strain Gradient On Pl Spectrasupporting

confidence: 88%

Section: Effect Of Strain Gradient On Pl Spectramentioning

confidence: 99%

Section: Effect Of Strain Gradient On Pl Spectramentioning

confidence: 99%

See 1 more Smart Citation

Tensile Strained Germanium Microstructures: A Comprehensive Analysis of Thermo‐Opto‐Mechanical Properties

Manganelli

Virgilio

Montanari

et al. 2021

Physica Status Solidi (a)

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“…1 (c)) of the Ge–Ge peak by the strain-phonon coefficient (− 395 cm −1 ) proposed by Manganelli et al . 30 and Ge 111 peak positions in the XRD patterns (Fig. 2 (c)) by the Bragg’s law.…”

Section: Resultsmentioning

confidence: 90%

“…2 (c)) by the Bragg’s law. The ε values are different between the Raman and XRD analyses, which is likely because the strain-phonon coefficient varies depending on the measurement environment and sample specifications 30 . Nevertheless, ε obtained from the Raman and XRD analyses have similar tendency with respect to Δ α .…”

Section: Resultsmentioning

confidence: 98%

Strain effects on polycrystalline germanium thin films

Imajo

Suemasu

Toko

2021

Sci Rep

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Polycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.

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Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature

Ayinde,

Myronov

2023

Adv Materials Inter

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The low thermal conductivity of a material is a key essential parameter for its potential application in high‐performance thermoelectric devices. Unprecedently low thermal conductivity of germanium tin (Ge1−xSnx) semiconductor thin film is experimentally obtained at room temperature. The thermal conductivity decreases with increasing Sn concentration in the relaxed Ge1−xSnx binary alloy, which is explained mainly by increasing the interatomic distance between atoms via alloying. A pronounced decrease of thermal conductivity, by over 20 times, from 58 W m−1K−1 in Ge to ≈2.5 W m−1K−1 in relaxed Ge1−xSnx, with Sn content up to 9% is observed. This thermal conductivity is just ≈2 times higher than that of the state‐of‐the‐art thermoelectric material, Bismuth Selenium Telluride. Ge1−xSnx, in contrast, is a non‐toxic Group‐IV semiconductor material, that is epitaxially grown on a standard silicon wafer up to 300 mm diameter using the semiconductor industry standard epitaxial growth technique. As a result, it can lead to the creation of a long‐awaited high‐performance low‐cost thermoelectric energy generator for room‐temperature applications in human's daily life and would make a substantial contribution toward global efforts in CO2 emission‐free and green electricity generation.

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Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis

Cited by 21 publications

References 49 publications

Tensile Strained Germanium Microstructures: A Comprehensive Analysis of Thermo‐Opto‐Mechanical Properties

Tensile Strained Germanium Microstructures: A Comprehensive Analysis of Thermo‐Opto‐Mechanical Properties

Strain effects on polycrystalline germanium thin films

Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature

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