Temperature Dependence of Surface Voltage of Silver Bromide

Sonoike, Sanemi; Wakabayasi, Hisawo

doi:10.1143/jpsj.14.1664

Cited by 14 publications

(1 citation statement)

References 2 publications

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“…The free energy of formation of both defects is determined by the enthalpy and entropy terms as given by Pi = a, -g,kT , Pv = a,g , k T , corresponding in general to (1). The excess interstitial concentration n, of the space charge layer can be calculated for each temperature from the equation The values for { 111) layers coincide surprisingly well with those calculated in our earlier paper [18], using the data for the surface potential of Sonoike and Wakabayashi [22]. Therefore, for the free energies of formation of Frenkel defects on the surface one can write in spite of the different bulk conductivity found in both measurements, one arrives a t the quite relevant conclusion that the disorder in the subsurface region is not substantially influenced by the concentration of defects in the bulk phase.…”

Section: Suqface Conductance and Lattice Disordersupporting

confidence: 77%

Surface ionic conductivity, lattice disorder, and space charge region in thin silver bromide layers

Starbov

Buroff

Malinowski

1976

Phys. Stat. Sol. (a)

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Carefully controlled conditions of evaporation allow the preparation of epitaxial layers of pure AgBr. The temperature dependence of the conductivity of layers with varying thickness is measured. This in principle makes possible the splitting of the conductance into surface and bulk components. The bulk conductivity of the layers is found to be practically identical with that of pure large single crystals of AgBr, which until now has not been observed. For the first time considerable surface conductance is directly observed not only for {111} but for {200} layers too. All parameters characterizing the Frenkel disorder in the subsurface region are evaluated from 150 °C down to room temperature.

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Section: Suqface Conductance and Lattice Disordersupporting

confidence: 77%

Surface ionic conductivity, lattice disorder, and space charge region in thin silver bromide layers

Starbov

Buroff

Malinowski

1976

Phys. Stat. Sol. (a)

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Ionic field effect in epitaxial AgBr layers

Zhelev

Malinowski

1977

Phys. Stat. Sol. (a)

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Reversible variations in the conductance of thin AgBr layers due to a capacitively applied electric field normal to the surface are measured. A suitable etching of the layers is made leading to changes in surface properties and to the appearance of the field‐effect signal. The effect of etching is discussed in terms of a healing of the surface disorder. The classical semiconductor physics theory of Garrett and Brattain is adapted to describe the surface conductance vs. surface potential dependence in silver halides. Observation of a minimum in the conductance curve makes possible the calculation of the surface potential and the charge in surface states. The results obtained support the model of Poeppel and Blakely indicating a finite number of surface sites.

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Defect Thermodynamics-Historical

Kröger

1974

Defects and Transport in Oxides

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Temperature Dependence of Surface Voltage of Silver Bromide

Cited by 14 publications

References 2 publications

Surface ionic conductivity, lattice disorder, and space charge region in thin silver bromide layers

Surface ionic conductivity, lattice disorder, and space charge region in thin silver bromide layers

Ionic field effect in epitaxial AgBr layers

Defect Thermodynamics-Historical

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