Temperature Dependence of TaSiN Thin Film Resistivity   from Room Temperature to 900°C

Oizumi, Munenori; Aoki, Katsuhiro; Fukuda, Yukio

doi:10.1143/jjap.40.l603

Cited by 6 publications

(6 citation statements)

References 10 publications

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“…As is the case for several silicon-based MEMS devices, the series resistance has to be reduced using proper metallic shunting structures. The temperature coefficient of resistivity is negative, which has been observed before for example for Ta-Si-N [13].…”

Section: Discussionsupporting

confidence: 74%

OS06W0405 Characterization of amorphous electrically conductive Mo-Si-N films for micromechanical applications

Kattelus¹,

Ylönen²,

Blomberg³

2003

ATEM

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Amorphous metallic alloys constitute a promising new group of materials for micromachining. Their most significant advantage over silicon is that film deposition may take place at so low temperatures that polymeric sacrificial layers tolerate the process. This paper describes characterization of molybdenum-silicon-nitrogen alloys, representing the so-called "mictamict" group, by keeping the focus on properties relevant to microelectromechanical applications. Structural, mechanical, electrical, optical, and thermal properties are reported.

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Section: Discussionsupporting

confidence: 74%

OS06W0405 Characterization of amorphous electrically conductive Mo-Si-N films for micromechanical applications

Kattelus¹,

Ylönen²,

Blomberg³

2003

ATEM

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“…These results are very consistent with the previous results. [8][9][10][11][12] To see the intrinsic structure of these films with various resistivities, we performed SEM in all samples ( Fig. 2(a)-2(e)).…”

Section: Resultsmentioning

confidence: 99%

“…6,7 To control its resistivity, several groups have studied TaSiN, and it also showed improvement in its resistivity stability. [8][9][10][11][12] In our previous study, we found that Ta x Si y N z materials with various Si concentrations could improve the power of SET and RESET processes in PRAM devices. 8 However, TaSiN material does not fully understand chemical states and intrinsic structure between TaN and Si elements.…”

Section: Introductionmentioning

confidence: 98%

Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

et al. 2015

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Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiOx-capped Si, and SiO2-capped Si were observed and analyzed using SEM and Si 2p and Ta 4f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters.

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“…(1) to (3), respectively. 27,28) Here, t and n in Eq. ( 1) are time (h) and the power-law's exponent, respectively.…”

Section: Lifetime Prediction Modelmentioning

confidence: 99%

Lifetime prediction model of Cu-based metallization against moisture under temperature and humidity accelerations

Gomasang¹,

Ogiue²,

Yokogawa³

et al. 2019

Jpn. J. Appl. Phys.

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To establish the lifetime prediction model for Cu-based metallization against moisture, temperature humidity storage test under the various accelerated conditions is performed. The increase of Cu sheet resistance induced by Cu-oxidation is measured by a four-point probe method. X-ray photoelectron spectroscopy analysis is carried out to investigate the variation of oxidized Cu. The activation energy and the humidity acceleration factor for Cu-based metallization have been derived by the statistical analysis to predict the lifetime against moisture for the first time. The results indicate that Cu-based metallization is comparatively more sensitive to the temperature than humidity at around the practical use condition.

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Temperature Dependence of TaSiN Thin Film Resistivity from Room Temperature to 900°C

Cited by 6 publications

References 10 publications

OS06W0405 Characterization of amorphous electrically conductive Mo-Si-N films for micromechanical applications

OS06W0405 Characterization of amorphous electrically conductive Mo-Si-N films for micromechanical applications

Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

Lifetime prediction model of Cu-based metallization against moisture under temperature and humidity accelerations

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