Temperature dependence of the conductivity in large-grained boron-doped ZnO films

Myong, Seung Yeop; Steinhauser, J.; Schlüchter, R.; Faÿ, S.; Vallat-Sauvain, E.; Shah, A.; Ballif, Christophe; Rufenacht, A

doi:10.1016/j.solmat.2007.04.022

Cited by 60 publications

(12 citation statements)

References 25 publications

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“…In Figure 4c, the conductivity of the as‐deposited (0.65) layer decreases at high T . Indeed, the conductivity of doped ZnO is dominated by T –independent ionized impurity scattering and tunneling (field emission) transport through the narrow grain boundary potential barrier, combined with thermally activated phonon scattering, which causes the conductivity to drop, as T is increased 36, 40. Conversely, the conductivity of the as‐deposited n‐i‐d layer is almost constant, and slightly increases for high T , which is typical for thermally activated thermionic emission transport over the high grain boundary potential barrier 22, 24, 36.…”

Section: Resultsmentioning

confidence: 99%

Relaxing the Conductivity/Transparency Trade‐Off in MOCVD ZnO Thin Films by Hydrogen Plasma

Ding

Nicolay

Steinhauser³

et al. 2013

Adv Funct Materials

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Increasing the conductivity of polycrystalline zinc oxide fi lms without impacting the transparency is a key aspect in the race to fi nd affordable and high quality material as replacement of indium-containing oxides. Usually, ZnO fi lm conductivity is provided by a high doping and electron concentration, detrimental to transparency, because of free carrier absorption. Here we show that hydrogen post-deposition plasma treatment applied to ZnO fi lms prepared by metalorganic low-pressure chemical vapor deposition allows a relaxation of the constraints of the conductivity/transparency trade-off. Upon treatment, an increase in electron concentration and Hall mobility is observed. The mobility reaches high values of 58 and 46 cm 2 V − 1 s − 1 for 2-μ mand 350-nm-thick fi lms, respectively, without altering the visible range transparency. From a combination of opto-electronic measurements, hydrogen is found, in particular, to reduce electron trap density at grain boundaries. After treatment, the values for intragrain or optical mobility are found similar to Hall mobility, and therefore, electron conduction is found to be no longer limited by the phenomenon of grain boundary scattering. This allows to achieve mobilities close to 60 cm 2 V − 1 s − 1 , even in ultra-transparent fi lms with carrier concentration as low as 10 19 cm − 3 .

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Section: Resultsmentioning

confidence: 99%

Relaxing the Conductivity/Transparency Trade‐Off in MOCVD ZnO Thin Films by Hydrogen Plasma

Ding

Nicolay

Steinhauser³

et al. 2013

Adv Funct Materials

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“…9. Their data contain more samples with a positive slope indicating field emission [61]. Both low-conductivity samples show a positive slope, i.e., increasing conductivity with increasing temperature.…”

Section: Fits To Literature Datamentioning

confidence: 99%

Field Emission at Grain Boundaries: Modeling the Conductivity in Highly Doped Polycrystalline Semiconductors

2016

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In this contribution, we elaborate a conductivity model for highly doped polycrystalline semiconductors. The prominent feature of the model is the description of grain-boundary scattering by field emission, i.e., quantum-mechanical tunneling of electrons through potential barriers at grain boundaries. For this purpose, we adapt a theory of Stratton [Theory of field emission from semiconductors, Phys. Rev. 125, 67 (1962)] to double Schottky barriers at grain boundaries. We provide strong evidence that field emission rather than the predominantly applied thermionic emission is the dominant transport path across grain boundaries in semiconductors with carrier concentrations exceeding approximately 10 19 cm −3. We obtain a comprehensive conductivity model for highly doped polycrystalline semiconductors by combining field emission with two intragrain scattering mechanisms, that are ionizedimpurity and electron-phonon scattering. The model is applied to a wide range of literature data in order to show its applicability and explanatory power. The literature data comprise, in particular, transparent conductive oxides with a special emphasis on aluminum-doped ZnO.

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“…Although there is not too much works about boron doped ZnO films [14][15][16][17][18], there is only a few study related to boron doped ZnO deposited by sol-gel method in among of them. Tahar and Tahar [19] used sol-gel dip coating method and investigated the electrical and optical properties of multilayer transparent conducting boron doped ZnO films according to various deposition parameters.…”

Section: Introductionmentioning

confidence: 99%

Boron doped nanostructure ZnO films onto ITO substrate

Çağlar

Ilıcan

Çağlar

et al. 2011

Journal of Alloys and Compounds

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Temperature dependence of the conductivity in large-grained boron-doped ZnO films

Cited by 60 publications

References 25 publications

Relaxing the Conductivity/Transparency Trade‐Off in MOCVD ZnO Thin Films by Hydrogen Plasma

Relaxing the Conductivity/Transparency Trade‐Off in MOCVD ZnO Thin Films by Hydrogen Plasma

Field Emission at Grain Boundaries: Modeling the Conductivity in Highly Doped Polycrystalline Semiconductors

Boron doped nanostructure ZnO films onto ITO substrate

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