Temperature dependence of the dielectric function of silicon using in situ spectroscopic ellipsometry

Vuye, G.; Fisson, S.; Van, Vien; Wang, Y.; Rivory, J.; Abelès, F.

doi:10.1016/0040-6090(93)90082-z

Cited by 151 publications

(110 citation statements)

References 9 publications

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“…Dependencies like this can be used for precise in situ sampletemperature control. 41 However, due to the large band gap of BN ͓E g (c-BN͒ϳ6.1 eV, 42 E g (h-BN͒ϳ5.5-5.9 eV͔ 43 even the lowest critical-point structure of BN was inaccessible for our in situ spectroscopic setup, which was limited to 5 eV.…”

Section: A In Situ Vis-se Investigationsmentioning

confidence: 93%

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Franke

Schubert

Hecht

et al. 1998

Journal of Applied Physics

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In situ infrared ͑IR͒ spectroscopy and visible-light ͑VIS͒ spectroscopic ellipsometry over the spectral range from 700 to 2000 cm Ϫ1 and 1.5-3.5 eV, respectively, were used to investigate the optical behavior of boron nitride ͑BN͒ thin films at temperatures from room temperature ͑RT͒ to 600°C. The polycrystalline hexagonal ͑h͒ and mixed-phase h-and cubic (c)-BN thin films were deposited by magnetron sputtering on ͓001͔ silicon. We observe a reversible moisture incorporation process in as-grown h-BN samples. When stored in normal ambient, the h-BN thin films absorb water into thin-film micropores. When annealed in ultrahigh vacuum or a dry nitrogen atmosphere, the samples expel moisture but retain their microstructure. This is observable by reduction of the thin-film refractive indices in accordance with changes in the IR lattice resonance behavior. The optical properties of high c-BN content thin films remain unchanged during annealing. And both intrinsic h-and c-BN thin-film VIS refractive indices are nearly temperature independent, at least up to 600°C. Therefore, RT BN optical constants can be used for feedback loop control in in situ thin-film growth at temperatures up to 600°C. ͓S0021-8979͑98͒07613-0͔

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Section: A In Situ Vis-se Investigationsmentioning

confidence: 93%

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Franke

Schubert

Hecht

et al. 1998

Journal of Applied Physics

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“…The first was a single silicon magnification standard (10-µm pitch), commercially prepared by electron beam lithography (Planotec Si Test Specimen, Ted Pella, Inc.). At wavelengths less than 450 nm, silicon is practically opaque with an absorption coefficient greater than 24,000 cm −1 [177]. events with an excess energy of 1.8 eV.…”

Section: Methodsmentioning

confidence: 99%

Aberration Corrected Photoemission Electron Microscopy with Photonics Applications

Fitzgerald¹

2000

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Photoemission electron microscopy (PEEM) uses photoelectrons excited from material surfaces by incident photons to probe the interaction of light with surfaces with nanometer-scale resolution. The point resolution of PEEM images is strongly limited by spherical and chromatic aberration. Image aberrations primarily originate from the acceleration of photoelectrons and imaging with the objective lens and vary strongly in magnitude with specimen emission characteristics. Spherical and chromatic aberration can be corrected with an electrostatic mirror, and here I develop a triode mirror with hyperbolic geometry that has two adjacent, field-adjustable regions. I present analytic and numerical models of the mirror and show that the optical properties agree to within a few percent. When this mirror is coupled with an electron lens, it can provide a large dynamic range of correction and the coefficients of spherical and chromatic aberration can be varied independently. I report on efforts to realize a triode mirror corrector, including design, characterization, and alignment in our microscope at Portland State University (PSU). PEEM may be used to investigate optically active nanostructures, and we show that photoelectron emission yields can be identified with diffraction, surface plasmons, and dielectric waveguiding.Furthermore, we find that photoelectron micrographs of nanostructured metal and dielectric structures correlate with electromagnetic field calculations. We conclude that photoemission is highly spatially sensitive to the electromagnetic field intensity, allowing the direct visualization of the interaction of light with material surfaces at nanometer scales and over a wide range of incident light frequencies.ii

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“…Fortunately, for silicon dielectric particles there is a wide frequency window in the nearest infrared range where the is extremely small [75]. The advantage of dielectric structures is a wide range of BSC wavelengths from microns (photonics) to centimeter (microwave range) as dependent on the choice of the radius of spheres.…”

Section: Summary and Discussionmentioning

confidence: 99%

“…Particulary in silicon the material losses vary significantly in the optical range [75]. We ran a numerical test at 725 nm with ( ) = 0.0075 to find that the propagation distance L ≈ 100a, a = 421 nm so the light can travel to approximately 60 wavelengths.…”

Section: Light Guiding Above the Light Linementioning

confidence: 99%

Light Trapping above the Light Cone in One-Dimensional Arrays of Dielectric Spheres

2017

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Abstract:We demonstrate bound states in the radiation continuum (BSC) in a linear periodic array of dielectric spheres in air above the light cone. We classify the BSCs by orbital angular momentum m = 0, ±1, ±2 according to the rotational symmetry of the array, Bloch wave vector β directed along the array according to the translational symmetry, and polarization. The most simple symmetry protected BSCs have m = 0, β = 0 and occur in a wide range of the radius of the spheres and dielectric constant. More sophisticated BSCs with m = 0, β = 0 exist only for a selected radius of spheres at fixed dielectric constant. We also find robust Bloch BSCs with β = 0, m = 0. All BSCs reside within the first but below the other diffraction continua. We show that the BSCs can be easily detected by bright features in scattering of different plane waves by the array as dependent on type of the BSC. The symmetry protected TE/TM BSCs can be traced by collapsing Fano resonance in cross-sections of normally incident TE/TM plane waves. When plane wave with circular polarization with frequency tuned to the bound states with OAM illuminates the array the spin angular momentum of the incident wave transfers into the orbital angular momentum of the BSC. This, in turn, gives rise to giant vortical power currents rotating around the array. Incident wave with linear polarization with frequency tuned to the Bloch bound state in the continuum induces giant laminar power currents. At last, the plane wave with linear polarization incident under tilt relative to the axis of array excites Poynting currents spiralling around the array. It is demonstrated numerically that quasi-bound leaky modes of the array can propagate both stationary waves and light pulses to a distance of 60 wavelengths at the frequencies close to the bound states in the radiation continuum. A semi-analytical estimate for decay rates of the guided waves is found to match the numerical data to a good accuracy.

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Temperature dependence of the dielectric function of silicon using in situ spectroscopic ellipsometry

Cited by 151 publications

References 9 publications

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

In situ infrared and visible-light ellipsometric investigations of boron nitride thin films at elevated temperatures

Aberration Corrected Photoemission Electron Microscopy with Photonics Applications

Light Trapping above the Light Cone in One-Dimensional Arrays of Dielectric Spheres

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