Temperature dependence of the electrical and thermal transport in FeCo/Cu/Ni₈₀Fe₂₀ spin valves

Abstract

Creating spin current under temperature gradient in magnetic devices has resulted in a new emerging field of spin caloritronics, but extraction of material parameters i.e. Seebeck coefficient and interpretation of thermal transport characteristics are still great challenges due to the thermal contact effect, especially in a wide temperature range. Because the heat-driven voltages do not depend on the change of magnetic states in spin valve, this could be used to obtain the accurate temperature difference applied on sample and exclude the thermal contact effect. Based on this calibration, the electrical and thermal spin transport behaviors in the in-plane FeCo/Cu/FeNi spin valve were systematically studied with various temperature. We observed that the Seebeck coefficients of spin valve was negative and spin-dependent Seebeck coefficient was proportional to the asymmetry parameter in a wide temperature range from 100 to 300 K, indicating that the spin-dependent thermal transports are closely related with electrical transports in the in-plane spin valve.

Giant Enhancement of Spin‐Orbit Torque Efficiency in Pt/Co Bilayers by Inserting a WSe2 under Layer

“…Figure 4b shows the temperature dependence of ξ, which continues to rise for the WSe 2 (5 ML) /Pt /Co structure while marginally declines for the sample without WSe 2 as T decreases from 300 to 10 K. The slight descending of ξ in Pt /Co structure would be ascribed to the increased proximity‐induced magnetic moments with the decrease of T , which is consistent with previous results. [ 46,47 ] The calculated ξ value of WSe 2 (5 ML) /Pt /Co device is to be ≈ 0.2 at T = 10 K, which is ≈1.5 times higher than that at RT. It is worth mentioning that Shao et al.…”

Temperature profile of nanospintronic device analyzed by spin-dependent Seebeck effect

“…In the present study, we develop an effective method for characterizing the temperature distribution in nanospintronic devices by using the magneto-Seebeck effect. [17][18][19][20] We have fabricated a laterally configured ferromagnetic/ nonmagnetic hybrid structure, consisting of a Co/Cu/NiFe GMR wire and a Pt wire bridged by a Cu strip. Here, Pt is a representative material used in spin Hall devices, and the Co/ Cu/NiFe trilayered wire is various applications such as magnetic sensor and spin-torque oscillator.…”