Temperature dependence of the electrical characteristics of ZnO thin film transistor with high-k NbLaO gate dielectric

Abstract

ZnO thin film transistor with high-k NbLaO/SiO2 bilayer gate dielectric was fabricated by sputtering, and the temperature dependence of the electrical properties of the device was investigated in the temperature range of 293–353 K for clarifying thermally activated carrier generation and carrier transport mechanisms in the conducting channel. With the increase in the temperature, the transfer curve shifts toward the negative gate voltage direction with a negative shift of the threshold voltage, an increase in the off-state current and the subthreshold slope, and a significant increase in carrier mobility. The decrease in the threshold voltage is originated from the formation of oxygen vacancy and the release of free electrons in the ZnO channel, and the formation energy can be estimated to be approximately 0.3 eV. In both subthreshold and above-threshold regimes, the temperature dependence of the drain current shows Arrhenius-type dependence, and the activation energy is around 0.94 eV for a gate voltage of 2 V, reducing with the increase in the gate voltage. The temperature dependence of the ZnO film resistance also exhibits an Arrhenius-type behavior, indicating that the thermal activation conduction process is the dominant conduction mechanism in the ZnO film. Two types of thermal activation conduction processes are observed in the 303–373 K temperature range. This is explained in terms of the existence of two types of deep donors that are consecutively excited to the conduction band as the temperature increases.

Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors

“…6b. The transport properties at room temperature were mostly reproduced after the temperature-dependent measurement, although it is not ideal, indicating that the effect of oxygen vacancies due to thermal excitation was low, and a few defects between the dielectric layer and the channel layer were present 47 . To further understand the carrier transport mechanism of the In 2 O 3 /ZnO TFT, Arrhenius plots of electron mobility, on current, and V TH are shown in Fig.…”

Azide-functionalized Ligand Enabling Organic–Inorganic Hybrid Dielectric for High-Performance Solution-Processed Oxide Transistors

“…6b. The transport properties at 298 K were mostly reproduced after the temperature-dependent measurement, although it is not ideal, indicating that the effect of oxygen vacancies due to thermal excitation was low, and a few defects between the dielectric layer and the channel layer were present 37 . To further understand the carrier transport mechanism of the In 2 O 3 /ZnO TFT, Arrhenius plots of electron mobility, on current, and V TH are shown in Fig.…”