Temperature dependence of the electron spin g factor in CdTe and InP

Abstract

Temperature dependence of the electron spin g factors in bulk CdTe and InP are calculated and compared with experiment. It is assumed that the only modification of the band structure related to temperature is a dilatation change in the fundamental energy gap. The dilatation changes of fundamental gaps are calculated for both materials using available experimental data. Computations of the band structures in the presence of a magnetic field are carried out employing five-level P·p model appropriate for medium-gap semiconductors. In particular, the model takes into account spin splitting due to bulk inversion asymmetry (BIA) of the materials. The resulting theoretical effective masses and g factors increase with electron energy due to band nonparabolicity. Average g values are calculated summing over populated Landau and spin levels properly accounting for the thermal distribution of electrons in the band. It is shown that the spin splitting due to BIA in the presence of magnetic field gives observable contributions to g values. Our calculations are in good agreement with experiment in the temperature range of 0 K to 300 K for CdTe and 0 K to 180 K for InP. The temperature dependence of g is stronger in CdTe than in InP due to different signs of the bandedge g values in the two materials. Good agreement between the theory and experiment strongly indicates that the temperature dependence of spin g factors is correctly explained. In addition, we discuss formulas for the energy dependence of spin g factor due to band nonparabolicity, which are liable to misinterpretation.

Universal behavior of electron g -factors in semiconductor nanostructures

“…( 3) coincides with the Roth-Lax-Zwerdling relation [63]. The values of interband coupling matrix element E p (Table I) calculated using the tight-binding approach are consistent with the literature [64,67,69,71]. Figure 1 shows that Eq.…”

Gilbert damping in CoFeB/GaAs(001) film with enhanced in-plane uniaxial magnetic anisotropy

“…The fact that the g value acquired from TRMOKE (2.18) is larger than that acquired from FMR (2.13) may be also caused by the transient heating effect. To our knowledge, the g value is temperature dependent 28 29 . For example, the g value of Permalloy was found to be increased from ~2.07 to ~2.14 when the temperature was increased from liquid nitrogen temperature to room temperature 28 .…”

Hybrid electron spin resonance and whispering gallery mode resonance spectroscopy of Fe3+in sapphire

“…26,27 The determination of g has been achieved in numerous materials, such GaAs, CdTe, InP, and graphite, and with various techniques. [28][29][30][31][32][33] In Al 2 O 3 crystals, electron spin resonance measurements have allowed the calculation of this factor for different ions in the microwave range. These measurements are summarized in Table II.…”