Temperature dependence of the ESR spectrum of the zinc vacancy in ZnO

Galland, Daniel; Hervé, A.

doi:10.1016/0038-1098(74)90401-3

Cited by 118 publications

(42 citation statements)

References 3 publications

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“…Ӎ1 cm −1 , both the Zn vacancies and negative ions are probably formed through recombination processes during the irradiation and are thus parts of defect complexes. This is supported by the observations that the isolated Zn vacancies 6 and probably isolated interstitials on both sublattices 12 are mobile well below room temperature. On the other hand, the introduction rate of the O vacancies suggests that they are primary defects, and comparison to results obtained from EPR measurements, 11,13 which show that the isolated O vacancy is stable at room temperature, suggests that the O vacancies observed in this work are isolated.…”

Section: ͑9͒supporting

confidence: 63%

“…In addition, already the early EPR studies 6 have shown that the isolated Zn vacancy is mobile well below room temperature. The fact that only the irradiation-induced Zn vacancies have annealed out of the material at 600 K implies that the ingrown Zn vacancies are not isolated ͑as expected, since they have survived the cooling down from the growth temperatures͒ and that the complexes formed during the irradiation are different from the in-grown Zn-vacancy-related defect.…”

Section: B Analysismentioning

confidence: 98%

“…Defects introduced by electron and neutron irradiation in ZnO have been studied by electron paramagnetic resonance ͑EPR͒ in the past [6][7][8][9][10][11] and also quite recently. 12,13 Signals from both Zn and O interstitials 12 and from Zn vacancies [6][7][8][9] have been observed only at temperatures well below the room temperature-i.e., at 4-90 K. The disparition of the signals has been reported to occur at several stages between 110 K and 280 K. Only the O vacancies have been observed with EPR at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…12,13 Signals from both Zn and O interstitials 12 and from Zn vacancies [6][7][8][9] have been observed only at temperatures well below the room temperature-i.e., at 4-90 K. The disparition of the signals has been reported to occur at several stages between 110 K and 280 K. Only the O vacancies have been observed with EPR at room temperature. 8,10,11,13 The photoluminescence spectrum of ZnO typically exhibits a green luminescence ͑GL͒ band similar to the yellow luminescence in GaN.…”

Section: Introductionmentioning

confidence: 99%

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Introduction and recovery of point defects in electron-irradiated ZnO

et al. 2005

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We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation ͑E el = 2 MeV, fluence 6 ϫ 10 17 cm −2 ͒ was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or O antisites. The Zn vacancies and negative ions act as compensating centers and are introduced at a concentration ͓V Zn ͔Ӎc ion Ӎ 2 ϫ 10 16 cm −3 . The O vacancies are introduced at a 10-times-larger concentration ͓V O ͔Ӎ3 ϫ 10 17 cm −3 and are suggested to be isolated. The O vacancies are observed as neutral at low temperatures, and an ionization energy of 100 meV could be fitted with the help of temperature-dependent Hall data, thus indicating their deep donor character. The irradiation-induced defects fully recover after the annealing at 600 K, in good agreement with electrical measurements. The Zn vacancies recover in two separate stages, indicating that the Zn vacancies are parts of two different defect complexes. The O vacancies anneal simultaneously with the Zn vacancies at the later stage, with an activation energy of E V,O m = 1.8± 0.1 eV. The negative ions anneal out between the two annealing stages of the vacancies.

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Section: ͑9͒supporting

confidence: 63%

Section: B Analysismentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Introduction and recovery of point defects in electron-irradiated ZnO

et al. 2005

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“…An EPR signal with g = 1.994 and g ⊥ = 1.996 has been unambiguously assigned to singly ionized oxygen vacancies [24][25][26]. An EPR spectrum with g values ranging from 2.003 to 2.019 has been assigned to the singly ionized zinc vacancy in ZnO [27][28][29] Fig . 6 shows the EPR spectrum of as-formed ZnO nanocrystalline powder recorded at room temperature.…”

Section: Electron Paramagnetic Resonance (Epr) Studiesmentioning

confidence: 92%

EPR, thermo and photoluminescence properties of ZnO nanopowders

Reddy

Kokila

Nagabhushana

et al. 2011

Spectrochimica Acta Part A: Molecular and Biomolecular Spectros

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a b s t r a c t Nanocrystalline ZnO powders have been synthesized by a low temperature solution combustion method. The photoluminescence (PL) spectrum of as-formed and heat treated ZnO shows strong violet (402, 421, 437, 485 nm) and weak green (520 nm) emission peaks respectively. The PL intensities of defect related emission bands decrease with calcinations temperature indicating the decrease of Zn i and V o + caused by the chemisorptions of oxygen. The results are correlated with the electron paramagnetic resonance (EPR) studies. Thermoluminescence (TL) glow curves of gamma irradiated ZnO nanoparticles exhibit a single broad glow peak at ∼343 • C. This can be attributed to the recombination of charge carriers released from the surface states associated with oxygen defects, mainly interstitial oxygen ion centers. The trapping parameters of ZnO irradiated with various ␥-doses are calculated using peak shape method. It is observed that the glow peak intensity increases with increase of gamma dose without changing glow curve shape. These two characteristic properties such as TL intensity increases with gamma dose and simple glow curve structure is an indication that the synthesized ZnO nanoparticles might be used as good TL dosimeter for high temperature application.

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